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Infineon
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| Part No. |
BUZ100S-4
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| OCR Text |
...ne channel active Symbol Values 8 Unit A
ID IDpuls
32
TA = 25 C
Pulsed drain current one channel active
TA = 25 C
Avalanche ener...4
V W
TA = 25 C
Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
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| File Size |
89.37K /
8 Page |
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http://
MPS Industries, Inc.
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| Part No. |
NE-4 NEU-6 NEU-8 NEU-4 NE-6 NE-8
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| OCR Text |
... specifications neu-4 neu-6 neu-8 input voltage for control 230 volts, single phase, 50/ 60 hz, 3 amps input voltage for power 400 volts, 3-phase, 50/ 60 hz 3 phase input current for power 10 amps 15 amps 20 amps maximum output power 4k... |
| Description |
E-BEAM GUN SWITCHING POWER SUPPLY
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| File Size |
55.87K /
1 Page |
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it Online |
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Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ100SL-4
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| OCR Text |
...A, VDD = 25 V, RGS = 25 L = 13.8 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C
Gate source voltage Power dissipation ,one channel active
VGS Ptot
14 2.4
V W
TA = 25 C
Opera... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
88.47K /
8 Page |
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http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ101SL-4
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| OCR Text |
...V, VGS = 5 V, ID = 4.1 A RG = 9.8
Rise time
tr
35 55
VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8
Turn-off delay time
td(off)
40 60
VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8
Fall time
tf
27 1.4 15 24 2.98 40 nC 2.1 22... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
89.10K /
8 Page |
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SIEMENS AG
Infineon Technologies AG
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| Part No. |
BUZ102S-4
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| OCR Text |
...e Values typ. max. Unit
gfs
8 1220 410 210 -
S pF 1525 515 265 ns 20 30
VDS 2 * ID * RDS(on)max, ID = 6.4 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1... |
| Description |
6.4 A, 55 V, 0.028 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS ? Power Transistor
Quad-Channel SIPMOS Power Transistor
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| File Size |
91.45K /
8 Page |
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Infineon
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| Part No. |
BUZ103S-4
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| OCR Text |
...b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
a
b
0.12
ID
RDS (on)0.11
0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03
k e f g hj i c d
9 8 7 6 5 4 3 2
a c
d e f g h i
bj
k l
0.02 VGS [V] = 0.01 0.00 0
a 4.5 4.0 ... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
|
| File Size |
90.04K /
8 Page |
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Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
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| Part No. |
BUZ103SL-4
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| OCR Text |
...Z 103SL-4
VDS
55 V
ID
4.8 A
RDS(on)
0.055
Package P-DSO-28
Ordering Code C67078-S. . . .- . .
Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.8 Unit A
ID IDpuls
19.2
TA = 25... |
| Description |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
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| File Size |
106.69K /
8 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MF1018S-4
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| OCR Text |
...TLINE DIMENSIONS
3.6 GND 0.6 1.8 GND 1.25
3.0 2.0 1.0
START 600.000 000 MHz STOP 1 100.000 000 MHz CH1 CENTER 950.000 000 MHz SPAN 100.000 000 MHz
,,,,,,,,,, ,,,,,,,,, ,,,, ,, , ,,,,,,,,, ,, , , , , ,, , , ,, ,, ,,,,,, ,,
Input R... |
| Description |
FOR DIGITAL MOBILE TELEPHONE, Rx
From old datasheet system
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| File Size |
136.31K /
1 Page |
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Toshiba Semiconductor
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| Part No. |
TLP281-4
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| OCR Text |
...ITTER 4:COLLECTOR 1 2 3 4 5 6 7 8 TLP281-4 16 15 14 13 12 11 10 9
TOSHIBA Weight: 0.19 g
Unit in mm
1,3,5,7 :ANODE 2,4,6,8 :CATHODE 9,11,13,15 :EMITTER 10,12,14,16 :COLLECTOR
1
2002-06-27
TLP281,TLP281-4
MAXIMUM RATINGS (T... |
| Description |
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
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| File Size |
198.33K /
8 Page |
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it Online |
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