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  8 8m Datasheet PDF File

For 8 8m Found Datasheets File :: 4926    Search Time::2.547ms    
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    K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...8M x 8 8m x 8 8m x 8 8m x 8 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buff...
Description 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

File Size 111.63K  /  11 Page

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    K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...8M x 8 Sense AMP 8M x 8 8m x 8 8m x 8 Refresh Counter Output Buffer Row Decoder Row Buffer ...
Description 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

File Size 116.54K  /  11 Page

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    K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...8M x 8 / 4M x 16 Sense AMP 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / ...
Description 16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 205.22K  /  14 Page

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    K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge o...8M x 8 / 4M x 16 Sense AMP 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / ...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 196.59K  /  14 Page

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    LH28F008SCT-L12

SHARP[Sharp Electrionic Components]
Part No. LH28F008SCT-L12
OCR Text ............. 7 a a 6 a 8 9 9 9 12 12 12 12 12 13 13 14 6.2.2 AC Input/Output Test Conditions.. ............... .26 27 6.2.3 DC C...8M-BIT (1 MB x 8) SmartVoltage Flash MEMORY n SmartVoltage Technology - 2.7V(Read-Only), 3.3V or 5V...
Description Flash Memory

File Size 3,042.58K  /  49 Page

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    MCH3408

Sanyo Semicon Device
Part No. MCH3408
OCR Text ...CPH3 Ratings 30 20 1.4 5.6 0.8 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source ...8m m ) 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT03304 No.701...
Description N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 27.11K  /  4 Page

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    MCM8A10 MCM8A10SG15

MOTOROLA[Motorola, Inc]
Part No. MCM8A10 MCM8A10SG15
OCR Text ...11 VCC DAISY D2 VSS W3 Q3 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 A0 A2 VCC A4 A6...8M bit static random access memory module organized as 1,048,576 words of 8 bits. The module is offe...
Description 1M x 8 Bit Fast Static RAM Module

File Size 79.38K  /  8 Page

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    MH16S64BAMD-10 MH16S64BAMD-7 MH16S64BAMD-8 MH16S64BAM

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S64BAMD-10 MH16S64BAMD-7 MH16S64BAMD-8 MH16S64BAM
OCR Text 8,-10 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM DESCRIPTION The MH16S64BAMD is 16777216 word X 64 bit Synchronous DRAM ...8M x 8 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line pac...
Description 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM

File Size 588.19K  /  55 Page

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    MH16S64BAMD-6 B99029

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S64BAMD-6 B99029
OCR Text ... sixteen industry standard 8M x 8 Synchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. This is a socket-type memory module ,suitab...
Description From old datasheet system
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

File Size 576.78K  /  40 Page

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    MH16S64DAMD-6 MH16S64DAMD-7 MH16S64DAMD-8 B99056

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MH16S64DAMD-6 MH16S64DAMD-7 MH16S64DAMD-8 B99056
OCR Text 8 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM DESCRIPTION The MH16S64DAMD is 16777216 - word by 64-bit Synchronous DRAM ...8M x 8 Sy nchronous DRAMs TSOP and industry standard EEPROM in TSSOP 168-pin (84-pin dual in-line pa...
Description From old datasheet system
1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM

File Size 710.53K  /  55 Page

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For 8 8m Found Datasheets File :: 4926    Search Time::2.547ms    
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