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For 7.5.amperes Found Datasheets File :: 14911 Search Time::3.172ms
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				ADPOW[Advanced Power Technology]
Part No.	APT5028SVR
OCR Text	...2650 360 150 110 19 45 10 11 43 7 3180 500 225 175 30 70 20 22 70 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-o...5 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 1...
Description	POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	64.83K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	...30AVR UNIT Volts Amps 500 14.7 58.8 30 40 155 1.24 -55 to 150 300 14.7 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transi...5 ID[Cont.]) Ohms A nA Volts 050-5825 Rev A Zero Gate Voltage Drain Current (VDS = VDSS, VGS ...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5032CVR
OCR Text	...2650 360 150 110 19 45 10 11 43 7 3180 500 225 175 30 70 20 22 70 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-o...5 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 1...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 14A 0.320 Ohm
File Size	60.85K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5040CNR
OCR Text	...AX UNIT 15 1430 330 130 71 8.7 37 14 21 44 15 22 1800 pF 465 200 105 12 55 28 42 ns nC 66 30 SOURCE-DRAIN DIODE RATINGS AND...5 D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/...
Description	POWER MOS IV 500V 13.0A 0.400 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	52.43K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	... M 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.50 mA nA 052-6253 Rev A Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector Cut-off Current (VCE = VC...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	...IT 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0 6-2000 052-6207 Rev E Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = V...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.90 -50 GS = 10V 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5560 Rev C 1.0 0.5 0.0 -50 -25 0 25 50 75 ...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.90 -50 GS = 10V 2.0 1.1 1.0 1.5 0.9 0.8 0.7 050-5534 Rev C 1.0 0.5 0.0 -50 -25 0 25 50 75 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60JN
OCR Text	...JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 0.7 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-5038 Rev E 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ...
Description	POWER MOS IV 500V 71A 0.060 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.22K / 4 Page	View it Online	Download Datasheet

				http:// ADPOW[Advanced Power Technology]
Part No.	APT8015JVFR APT8015
OCR Text	.../dt = 100A/s) 280 950 2.5 17.7 16.1 36.2 560 1600 THERMAL / PACKAGE CHARACTERISTICS Symbol RJC RJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to M...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

For 7.5.amperes Found Datasheets File :: 14911 Search Time::3.172ms
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