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  5.00 03 90 Datasheet PDF File

For 5.00 03 90 Found Datasheets File :: 29538    Search Time::2.25ms    
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    RJK1536DPE-00-J3 RJK1536DPE-10

Renesas Electronics Corporation
Part No. RJK1536DPE-00-J3 RJK1536DPE-10
OCR Text ... forward voltage v df ? 0.9 1.5 v i f = 25 a, v gs = 0 body-drain diode reverse recovery time t rr ? 130 ? ns i f = 50 a, v gs = 0...00 page 3 of 6 jun 30, 2010 main characteristics 150 125 100 70 50 25 0 50 100 150 200 50 40...
Description 50 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
N-Channel Power MOSFET High-Speed Switching Use

File Size 76.42K  /  7 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. RJK6015DPK-00-T0 RJK6015DPK
OCR Text ...7 13 29 0.89 430 Max -- 1 0.1 4.5 0.360 -- -- -- -- -- -- -- -- -- -- 1.50 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditio...00 Apr 18, 2007 Page 2 of 6 RJK6015DPK Main Characteristics Power vs. Temperature Derating 4...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 99.99K  /  7 Page

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    Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Part No. RJK6014DPK-00-T0 RJK6014DPK
OCR Text ...Tstg Ratings 600 30 16 32 16 32 5 1.3 150 0.833 150 -55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G1517-0200 Rev.2.00 Jun 04, 2007 Page 1 of 6 RJK6014DPK Electrical Characteristics (Ta = 25C) Item Drain to source breakdown vol...
Description Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开

File Size 101.68K  /  7 Page

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    RJK0389DPA-00-J53 RJK0389DPA09

Renesas Electronics Corporation
Part No. RJK0389DPA-00-J53 RJK0389DPA09
OCR Text ... Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Pa...00 Sep 29, 2009 Page 1 of 10 RJK0389DPA Preliminary Electrical Characteristics * MOS1 (Ta ...
Description Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

File Size 348.23K  /  11 Page

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    Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Part No. RJK5015DPK-00-T0 RJK5015DPK
OCR Text ...6 14 29 0.96 380 Max -- 1 0.1 4.5 0.24 -- -- -- -- -- -- -- -- -- -- 1.60 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test condition...00 Apr 18, 2007 Page 2 of 6 RJK5015DPK Main Characteristics Power vs. Temperature Derating 4...
Description 1 A low VF MEGA Schottky barrier rectifier, SOD123W (SOD2 FlatPower), Reel Pack, SMD 通道场效应晶体管高速电源开
Silicon N Channel MOS FET High Speed Power Switching

File Size 99.52K  /  7 Page

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    RJE0603JPE-00-J3 RJE0603JPE-15

Renesas Electronics Corporation
Part No. RJE0603JPE-00-J3 RJE0603JPE-15
OCR Text ...ate to source voltage v gss 2.5 v drain current i d ?50 note3 a body-drain diode reverse drain current i dr ?50 a avalanche cu...00 nov 04, 2010 rje0603jpe preliminary r07ds0193ej0200 rev.2.00 page 2 of 6 nov 04, 2010 ...
Description 50 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
Silicon P Channel MOS FET Series Power Switching

File Size 78.82K  /  7 Page

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    RJK03E0DNS-00-J5

Renesas Electronics Corporation
Part No. RJK03E0DNS-00-J5
OCR Text ...gh speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1902-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code...
Description 30 A, 30 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching

File Size 135.12K  /  7 Page

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    RJK03E1DNS-00-J5

Renesas Electronics Corporation
Part No. RJK03E1DNS-00-J5
OCR Text ...gh speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1903-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code...
Description Silicon N Channel Power MOS FET Power Switching

File Size 144.59K  /  7 Page

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