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  4m-byte Datasheet PDF File

For 4m-byte Found Datasheets File :: 2263    Search Time::1.453ms    
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    MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111MC-15 MX27C4111MC-90 MX27C4111PC-10 MX27C4111PC-12 MX27C4111PC-15 MX27C

Macronix International Co., Ltd.
PROM
MCNIX[Macronix International]
Part No. MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111MC-15 MX27C4111MC-90 MX27C4111PC-10 MX27C4111PC-12 MX27C4111PC-15 MX27C4111PC-90
OCR Text 4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE FEATURES * * * * * * With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns Page mode access ...
Description 4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40
SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA

File Size 496.08K  /  15 Page

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    Cypress Semiconductor Corp.
Part No. CY7C1410AV18-200BZI CY7C1410AV18-200BZXI CY7C1410AV18-250BZI CY7C1410AV18-250BZXC CY7C1410AV18-200BZXC CY7C1410AV18-250BZXI CY7C1410AV18-167BZI CY7C1410AV18-167BZXC CY7C1410AV18-167BZXI
OCR Text ...t configurations cy7c1410av18 ? 4m x 8 cy7c1425av18 ? 4m x 9 cy7c1412av18 ? 2m x 18 cy7c1414av18 ? 1m x 36 functional description the cy7c1...byte write select 0, 1, 2 and 3 ? active low . sampled on the rising edge of the k and k clocks ...
Description 36-Mbit QDR-IISRAM 2-Word Burst Architecture

File Size 1,014.42K  /  25 Page

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    Cypress
Part No. CY7C1413V18-250BZCES CY7C1413V18-167BZC CY7C1415V18
OCR Text ...ment configurations cy7c1411v18?4m x 8 cy7c1426v18?4m x 9 cy7c1413v18?2m x 18 cy7c1415v18?1m x 36 functional description the cy7c1411v18, cy...byte write select 0, 1, 2, and 3 ? active low . sampled on the rising edge of the k and k clocks ...
Description 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture

File Size 260.92K  /  24 Page

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    AMIC Technology Corporation
AMIC Technology, Corp.
Part No. A82DL16X4T A82DL1634 A82DL1644 A82DL1624 A82DL1624TG-70IF A82DL1624TG-70U A82DL1624TG-70F A82DL1624UG-70U A82DL1624UG-70UF A82DL1624TG-70UF A82DL1634UG-70U A82DL1634UG-70UF A82DL1634TG-70U A82DL1634TG-70UF A82DL1644UG-70F A82DL1644TG-70U A82DL1644TG-70UF A82DL1644UG-70IF A82DL1644UG-70UF A82DL1624UG-70IF A82DL1634UG-70IF A82DL1624UG-70F A82DL1634TG-70I A82DL1634TG-70F A82DL1634TG-70IF A82DL1644TG-70IF
OCR Text ...ous operation flash memory and 4m (256kx16 bit) static ram preliminary preliminary (august, 2005, version 0.0) amic technol...byte mode data appears on i/o 0 ? i/o 7 . the device is designed to be programmed in-system with th...
Description Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:6A; Actuator Style:Locking Lever; Switch Terminals:Solder Lug; Current Rating:6A; Mounting Type:PCB; Switch Features:Locking Lever Actuator RoHS Compliant: Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-Off-(On); Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Solder Lug; Current Rating:6A; Mounting Type:PCB; Switch Features:Bat Actuator; No. of Switch Positions:3 RoHS Compliant: Yes
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL16x4T(ü)16兆位Mx8 Bit/1Simultaneous行动闪存M56Kx16位)新币
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S 堆叠式多芯片封装(MCP)闪存和SRAMA82DL16x4T(ü)16兆位Mx8 Bit/1Simultaneous行动闪存M56Kx16位)新币

File Size 905.22K  /  57 Page

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    ELAN Microelctronics Corp .
Elan Microelectronics, Corp.
Part No. EM39LV040-90FDI EM39LV040-55FDI EM39LV040-45RFDI EM39LV040-70FDI EM39LV040-45RFMC EM39LV040-70FHI EM39LV040-90FHC EM39LV040-70FHC EM39LV040-45RFHC EM39LV040-55FHC EM39LV040-90FHI EM39LV040-55FHI EM39LV040-45RFHI EM39LV040-45RFLI EM39LV040-45RFLC EM39LV040-90FLC EM39LV040-55FLI EM39LV040-70FLI EM39LV040-70FMC EM39LV040-90FMC
OCR Text 4m (512kx8) bit s flash memory specifica t ion general description the em39lv040 is a 4m bits flash memory organized as 512k x 8 bits....byte-program time of 11 sec and a typical sector-erase ti me of 40 ms. the device uses toggle bi...
Description 39514262
4M (512Kx8) Bits Flash Memory 4分(512Kx8)位快闪记忆

File Size 157.73K  /  21 Page

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    Macronix International Co., Ltd.
Part No. 27C4000-90
OCR Text ...ion the mx27c4000 is a 5v only, 4m-bit, one time programmable read only memory. it is organized as 512k words by 8 bits per word, operates f...byte 0 ( a0 = vil) represents the manufacturer code, and byte 1 (a0 = vih), the device identifier co...
Description 4M-BIT [512K x8] CMOS EPROM 4分位[12k x8]的CMOS存储

File Size 986.88K  /  15 Page

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    Macronix International Co., Ltd.
Part No. 27C4096-12 27C4096-10
OCR Text ...he mx27c4100/4096 is a 5v only, 4m-bit, one time programmable read only memory. it is organized as 256k words by 16 bits per word(mx27c4096)...byte/vpp gnd q15/a-1 q7 q14 q6 q13 q5 q12 q4 vcc a17 a7 a6 a5 a4 a3 a2 a1 a0 ce gnd oe q0 q8 q1 q9 q...
Description 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储

File Size 791.22K  /  18 Page

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    Macronix International Co., Ltd.
Part No. 27C4111-90
OCR Text ... description the mx27c4111 is a 4m-bit, one time programmable read only memory with page mode. it is organized as 512k x 8 or 256k x 16, ope...byte/vpp gnd q15/a-1 q7 q14 q6 q13 q5 q12 q4 vcc a17 a7 a6 a5 a4 a3 a2 a1 a0 ce gnd oe q0 q8 q1 q9 q...
Description 4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE

File Size 525.85K  /  15 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8D6316UBM-PI08 K8D6316UBM-PI09 K8D6316UTM-DC09 K8D6316UTM-FC09 K8D6316UTM-DC07 K8D6316UTM-FI08 K8D6316UTM-FI07 K8D6316UTM-DI07 K8D6316UTM-DI09 K8D6316UTM-DI08 K8D6316UTM-DC08 K8D6316UTM-FC08 K8D6316UTM-FC07 K8D6316UBM-DC09 K8D6316UBM-DI09 K8D6316UBM-DC08 K8D6316UBM-DI08 K8D6316UBM-DI07 K8D6316UBM-PC09 K8D6316UBM-FI09 K8D6316UBM-FI08 K8D6316UBM-LI08 K8D6316UBM-FI07 K8D6316UBM-PC07 K8D6316UBM-TI09 K8D6316UBM-TC08 K8D6316UBM-TI08 K8D6316UBM-PC08 K8D6316UBM-LC08 K8D6316UBM-FC08 K8D6316UBM-FC09 K8D6316UBM-LC07 K8D6316UBM-LI07 K8D6316UBM-TC07 K8D6316UBM-TC09 K8D6316UBM-TI07
OCR Text 4m x16) dual bank nor flash memory revision history revision no. 0.0 1.0 1.1 1.2 1.3 1.4 1.5 remark preliminary final history initial draft...byte) or 16 bits (word) and erases in units of a block. single or multiple blocks can be erased. the...
Description 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

File Size 656.73K  /  48 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM29V040T
OCR Text ...ss (a 12 -a 18 ) 128byte column 4m : 4k row (=128 blocks) 32 byte 8 bit good block i/o 0 ~ i/o 7 1 frame = 32 byte 1 row = 4 frames = 128 bytes 1 block = 32 rows = 4k bytes 1 device = 32b x 4frames x 32rows x 128blocks = 4mbits...
Description 512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)

File Size 223.64K  /  21 Page

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