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Micross Components
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| Part No. |
ICE4N73
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| OCR Text |
...v/dt ruggedness 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 65 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m 3... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
563.29K /
4 Page |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP11NM60A STP11NM60AFP STB11NM60A-1
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| OCR Text |
...pF pF
VGS = 0V, VDS = 0V to 480V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDD = 300 V, ID = 5.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 11 A, VGS = 10V Min.
SWITCHING ... |
| Description |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?Power MOSFET
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| File Size |
366.37K /
11 Page |
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Icemos Technology
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| Part No. |
ICE4N73
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| OCR Text |
... =10v 1.0 typ q g v ds =480v 21nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 ye... |
| Description |
Enhancement Mode MOSFET
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| File Size |
581.83K /
8 Page |
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it Online |
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Micross Components
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| Part No. |
ICE4N73FP
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| OCR Text |
...v/dt ruggedness 50 v/ns v ds = 480v, i d = 4a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m 2... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
550.40K /
4 Page |
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it Online |
Download Datasheet |
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International Rectifier
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| Part No. |
IRG4PC50F-EPBF IRG4PC50F-EPBF-15
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| OCR Text |
...TJ = 25C ns 350 IC = 39A, VCC = 480V 190 VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 10, 11, 13, 14 3.0 TJ = 150C, IC = 39A, VCC = 480V ns VGE = 15V, RG = 5.0 Energy losses include "tail" mJ See Fig. 13, 14 nH Measu... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
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| File Size |
322.88K /
8 Page |
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it Online |
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Advanced Power Electronics
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| Part No. |
AP02N60I
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| OCR Text |
...20V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= 30V ID=2A VDS=480V VGS=10V VDS=300V ID=2A RG=10,VGS=10V RD=150 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
112.50K /
6 Page |
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it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE4N73FP
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| OCR Text |
... =10v 1.0 typ q g v ds =480v 21nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 ye... |
| Description |
Enhancement Mode MOSFET
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| File Size |
744.62K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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