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  40v-200v Datasheet PDF File

For 40v-200v Found Datasheets File :: 1388    Search Time::1.234ms    
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    IRF5801

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF5801
OCR Text ... V DS= 160V V DS= 100V V DS= 40V Ciss 80 12 8 40 Coss Crss 4 0 1 10 100 1000 0 0 1 2 3 4 5 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltag...
Description Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)最大值\u003d 2.2ohm,身份证\u003d 0.6A的)
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)

File Size 119.47K  /  8 Page

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    IRFR224B IRFU224B IRFR224BTMFP001 IRFR224BTMNL

Fairchild Semiconductor
International Rectifier
Part No. IRFR224B IRFU224B IRFR224BTMFP001 IRFR224BTMNL
OCR Text ... 25 C -55 C Notes : 1. VDS = 40V 2. 250 s Pulse Test o o 10 -1 Notes : 1. 250 s Pulse Test 2. TC = 25 10 10 -1 -1 ...200V Capacitance [pF] 600 Ciss Coss 6 400 4 Crss 200 Notes : 1. VGS = 0 V ...
Description 250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A
250V N-Channel MOSFET

File Size 667.36K  /  9 Page

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    IRL610 IRL610A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRL610 IRL610A
OCR Text ...60V,TC=125C VGS=5V,ID=1.65A VDS=40V,ID=1.65A (4) (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=3.3A, RG=22 See Fig 13 VDS=160V,VGS=5V, ID=3.3A (4) (5) See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Charact...
Description Advanced Power MOSFET

File Size 233.69K  /  7 Page

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    MAX1779 MAX1779EUE

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Part No. MAX1779 MAX1779EUE
OCR Text ...regulate output voltages up to +40V and down to -40V. A proprietary regulation algorithm minimizes output ripple, as well as capacitor sizes...200V VFBP = +1.300V Rising edge Falling edge 20 1.09 1.13 1.11 0.1 1.16 1.5 VFBP = +1.5V 1.30 50 10 ...
Description 32-Bit Digital Signal Controller with ROM 100-LQFP -40 to 125 0.7 A SWITCHING REGULATOR, 305 kHz SWITCHING FREQ-MAX, PDSO16
Low-Power Triple-Output TFT LCD DC-DC Converter

File Size 499.71K  /  18 Page

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    IRF610B IRF610BFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF610B IRF610BFP001
OCR Text ... = 25 o Notes : 1. VDS = 40V 2. 250 s Pulse Test 10 -1 10 0 10 1 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. T...
Description 200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET

File Size 864.32K  /  10 Page

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    IRF630A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF630A
OCR Text ...0V,TC=125 C VGS=10V,ID=4.5A VDS=40V,ID=4.5A 4 O 4 O o V/ oC ID=250 A VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=9A, RG=12 See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Charac...
Description    Advanced Power MOSFET

File Size 254.86K  /  7 Page

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    IRF630B IRFS630B IRF630BFP001 IRF630BTSTUFP001 IRFS630BFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF630B IRFS630B IRF630BFP001 IRF630BTSTUFP001 IRFS630BFP001
OCR Text ...2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test 10 -1 10 -1 -1 10 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristic...
Description    200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRF630 & IRF630A
200V N-Channel B-FET / Substitute of IRFS630 & IRFS630A

File Size 857.15K  /  10 Page

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    IRF630N IRF630NL IRF630NS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF630N IRF630NL IRF630NS
OCR Text ....4A V DS= 160V V DS= 100V V DS= 40V 1000 12 C, Capacitance(pF) 800 Ciss 600 8 Coss 400 4 200 Crss 0 1 10 100 1000 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC...
Description Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)
Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)

File Size 152.79K  /  11 Page

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    IRF7450

IRF[International Rectifier]
Part No. IRF7450
OCR Text ... VDS = 160V VDS = 100V VDS = 40V 12 8 100 4 10 1 10 100 1000 0 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical...
Description SMPS MOSFET

File Size 100.88K  /  8 Page

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For 40v-200v Found Datasheets File :: 1388    Search Time::1.234ms    
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