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  200us Datasheet PDF File

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    Hynix Semiconductor, Inc.
Part No. HY27UH088GDM-MPEB HY27UH088G2M-TIS HY27UH088G2M-TIB HY27UH088G2M-TIP
OCR Text ...0ns(min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description 1G X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52
1G X 8 FLASH 3.3V PROM, 30 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48

File Size 445.48K  /  53 Page

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    HY27UF084G2M

Hynix Semiconductor
Part No. HY27UF084G2M
OCR Text ...0ns (min.) - Page program time: 200us (typ.) COPY BACK PROGRAM MODE - Fast page copy without external buffering CACHE PROGRAM MODE - Internal Cache Register to improve the program throughput FAST BLOCK ERASE - Block erase time: 2ms (Typ.) ...
Description 4Gbit (512K x 8-Bit) NAND Flash

File Size 412.39K  /  54 Page

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    HY27US16281A

Hynix Semiconductor
Part No. HY27US16281A
OCR Text ...ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering fast block erase - block erase time: 2ms (typ.) status register electronic signature - manufacturer code - device code chip...
Description (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory

File Size 420.50K  /  44 Page

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    HY27UK08BGFM

Hynix Semiconductor
Part No. HY27UK08BGFM
OCR Text ...ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description 32Gbit (4Gx8bit) NAND Flash

File Size 337.39K  /  46 Page

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    Hynix Semiconductor, Inc.
Part No. HY27UG088G2M-TIS HY27UG088G2M-TCB HY27UG088G2M-TPEB HY27UG088G2M-TIP HY27UG088G2M-TEB HY27UG088G2M-TPIB
OCR Text ...ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description 1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
1G X 8 FLASH 3.3V PROM, 25 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48

File Size 368.41K  /  53 Page

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    HY27UF082G2M

Hynix Semiconductor
Part No. HY27UF082G2M
OCR Text ...0ns (min.) - Page program time: 200us (typ.) COPY BACK PROGRAM MODE - Fast page copy without external buffering CACHE PROGRAM MODE - Internal Cache Register to improve the program throughput FAST BLOCK ERASE - Block erase time: 2ms (Typ....
Description (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory

File Size 498.34K  /  53 Page

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    Mosel Vitelic Corp
Part No. V58C365164S
OCR Text ...able condition for a minimum of 200us. 3. the minimum of 200us after stable power and clock (clk, clk ), apply nop & take cke high. 4. precharge all banks. 5. issue emrs to enable dll.(to issue ?dll enable? command, provide ?low? to a0, ?...
Description 64 Mbit DDR SDRAM 4M X 16/ 3.3VOLT

File Size 509.36K  /  44 Page

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    Hynix
Part No. HY27UG088GDM
OCR Text ...ns (min.) - page program time: 200us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description 8Gb NAND Flash

File Size 426.99K  /  50 Page

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    NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6

NanoAmp Solutions, Inc.
Part No. NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6
OCR Text ...command inputmustbe stable fo r 200us /ck ck t rp 2c lo ck min. 2c lo ck min. t rp trfc trfc 2c lo ck min. precharge all banks emrs mrs dll reset precharge all banks 1s t auto refresh 2nd auto refresh mode register set any command 200 c lo ...
Description 1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL

File Size 790.05K  /  46 Page

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