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  200a 800v Datasheet PDF File

For 200a 800v Found Datasheets File :: 605    Search Time::1.609ms    
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    STW13NK80Z 9631

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STW13NK80Z 9631
OCR Text ...rating area (1) I SD 12A, di/dt 200a/s, VDD V (BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum ...
Description N-CHANNEL 800v - 0.53W - 12A TO-247 Zener-Protected SuperMESHPower MOSFET N沟道800v 0.53W -2A47齐纳保护SuperMESH?功率MOSFET
N-CHANNEL 800v - 0.53W - 12A TO-247 Zener-Protected SuperMESH Power MOSFET
From old datasheet system
N-CHANNEL 800v 0.53 OHM 12A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET

File Size 308.90K  /  9 Page

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    sanrex
Part No. DF200BA80 DF200BA40 DF200BA40-80
OCR Text ...50 Tj 25 at VRRM Conditions IFM 200a, Inst measurement Junction to case Ratings 20.0 1.20 0.10 Unit mA V /W SanRex(R) 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com DF200BA40...
Description DIODE MODULE
From old datasheet system

File Size 93.07K  /  2 Page

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    8EWS16STRL 8EWS16S 8EWS16STR 8EWS16STRR 8EWS08SPBF 8EWS12STRR 8EWS12STR 8EWS12STRL

International Rectifier
Part No. 8EWS16STRL 8EWS16S 8EWS16STR 8EWS16STRR 8EWS08SPBF 8EWS12STRR 8EWS12STR 8EWS12STRL
OCR Text ...s. VF < 1V @ 5A IFSM = 200a VRRM 800 to 1200V Output Current in Typical Applications Applications NEMA FR-4 or G10 glass fabric...800v 10 = 1000V 12 = 1200V 2 3 ANODE CATHODE ANODE (*) for higher voltage up to 1600V co...
Description 800v 8A Std. Recovery Diode in a D-Pakpackage
1200V 8A Std. Recovery Diode in a D-Pakpackage

File Size 204.48K  /  8 Page

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    TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. SML3010T254
OCR Text ... , Sine t = 8.3ms (60Hz) , Sine 200a 210A 185A 195A 200a 180A TBA -40 to +150C 150C -40 to +150C Prelim. 3/95 Peak One Cycle Surge Forwa...800v VR = 800v IF = 36A IF = 1A di/dt = -15A/s IF = 30A IRM RJC RJA Peak Reverse Current diF/dt = -...
Description FAST RECOVERY EPITAXIAL DIODE IN A HERMETIC TO-254 METAL PACKAGE

File Size 13.91K  /  2 Page

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    STP4NK80ZFP STP4NK80Z STD4NK80Z 9250 STD4NK80Z-1

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
Part No. STP4NK80ZFP STP4NK80Z STD4NK80Z 9250 STD4NK80Z-1
OCR Text ...perating area (1) ISD 4A, di/dt 200a/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Max...
Description N-CHANNEL 800v - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?/a> Power MOSFET
N-CHANNEL 800v - 3 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 800v - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET
From old datasheet system
N-Channle MOSFET
N-CHANNEL 800v - 3 OHM - 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 800v - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 800v - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH?/a> Power MOSFET
N-CHANNEL 800v - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESHPower MOSFET N沟道800v 3ohm -A TO-220/TO-220FP/DPAK/IPAK齐保护的SuperMESH⑩功率MOSFET

File Size 620.88K  /  13 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STW9NB80 6446
OCR Text ...150 150 (1) I SD 9.3A, di/dt 200a/s, VDD V(BR)DSS, Tj TJMAX Un it V V V A A A W W /o C V/ns o o C C (*) Pulse width limited by safe operating area July 1999 1/8 STW9NB80 THERMAL DATA R thj -case R thj -amb R thc-si...
Description N-CHANNEL 800v - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET
N-CHANNEL 800v - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET
From old datasheet system

File Size 85.36K  /  8 Page

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    RT9224E RT9224EC RT9224ECS RT9224EP RT9224EPS

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
Part No. RT9224E RT9224EC RT9224ECS RT9224EP RT9224EPS
OCR Text ...OOD Over current set pin, sinks 200a through a resistor (ROCS) from this upper N-MOSFET to set the trip point: 2 OCSET IPEAK = 2...800v 1.825V Note: (1) 0:Connected to GND (2) 1:Open DS9224E-02 March 2004 www.richtek.com 5...
Description VRM 8.5 Synchronous PWM Buck Converter Controller and Output Voltage Monitor

File Size 204.68K  /  8 Page

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    FQP5N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP5N80
OCR Text ...g TJ = 25C 3. ISD 4.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description 800v N-Channel MOSFET

File Size 659.59K  /  8 Page

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    FQB2N80 FQI2N80 FQB2N80TM FQI2N80TU

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB2N80 FQI2N80 FQB2N80TM FQI2N80TU
OCR Text ...g TJ = 25C 3. ISD 2.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description 800v N-Channel QFET
800v N-Channel MOSFET

File Size 657.80K  /  9 Page

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    FQD1N80 FQU1N80 FQU1N80TU FQD1N80TF FQD1N80TM

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
3M Company
Part No. FQD1N80 FQU1N80 FQU1N80TU FQD1N80TF FQD1N80TM
OCR Text ...g TJ = 25C 3. ISD 1.0A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 ...
Description Power MOSFET
800v N-Channel MOSFET 1 A, 800 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 634.57K  /  9 Page

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For 200a 800v Found Datasheets File :: 605    Search Time::1.609ms    
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