2.7-3.8ghz pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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2.7-3.8ghz Datasheet PDF File

For 2.7-3.8ghz Found Datasheets File :: 880 Search Time::5.375ms
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				Linear
Part No.	LTC4401-2 LTC4401-1
OCR Text	2 RF Power Controllers with 250kHz Loop BW and 45dB Dynamic Range FEATURES s s s DESCRIPTIO TM s s s s s s s s s s s s RF ...7) SHDN = 0V SHDN = HI, IVPCA/B = 0mA RLOAD = 400, Enabled ILOAD = 6mA, VCC = 3V PCTL = 1V VPCA/B = ...
Description	Dual RF Power Controller with 450kHz Loop BW (800MHz to 2GHz) ThinSOT RF Power Controller with 450kHz Loop BW (800MHz to 2.7GHz)
File Size	184.76K / 16 Page	View it Online	Download Datasheet

				LINEAR TECHNOLOGY CORP Linear Technology, Corp.
Part No.	LTC4402-2 LTC4402-1 LTC4402-1EMS8 LTC4402-2EMS
OCR Text	2 Multiband RF Power Controllers for EDGE/TDMA FEATURES s s DESCRIPTIO s s s s s s s s s s s s s s Supports AM Modulation in...7 6 VIN BSEL VHOLD SHDN PCTL RF VPCA VPCB GND GND 10 2 3 4 5 850MHz/ 900MHz RF PA 50 0.4pF 0.05pF ...
Description	Multiband RF Power Controllers for EDGE/TDMA Multiband RF Power Controllers for EDGE/TDMA; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C SPECIALTY TELECOM CIRCUIT, PDSO8
File Size	196.05K / 12 Page	View it Online	Download Datasheet

				Linear
Part No.	LTC4403-2 LTC4403-1
OCR Text	2 Multiband RF Power Controllers for EDGE/TDMA FEATURES s s DESCRIPTIO January 2003 s s s s s s s s s s s s s Supports AM...7 6 VIN BSEL VHOLD SHDN PCTL RF VPCA VPCB GND GND 10 2 3 4 5 850MHz/ 900MHz RF PA 50 0.4pF 0.05pF ...
Description	Multiband RF Power Controllers for EDGE/TDMA
File Size	196.02K / 12 Page	View it Online	Download Datasheet

				ericsson
Part No.	ROK101008
OCR Text	...ooth 1.0B RF output power class 2 FCC and ETSI approved 460 kb/s max data rate over UART UART and PCM interface I2C interface Internal cryst...7 0.7xVCC_IO 0 2.0 0 0 0.9xVCC_IO 0 3.3 3.3 5.25 3.6 V V VCC_IO V 0.3xVCC_IO V VCC V 0.4...
Description	Bluetooth MCM Point to Point
File Size	638.00K / 18 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181R Q62702-F1685
OCR Text	...n BFP 181R RFs Q62702-F1685 1=E 2=C 3=E 4=B Package SOT-143R Maximum Ratings Parameter Collector-emitter voltage Collector-emitter vol...7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	59.01K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181W Q62702-F1501
OCR Text	...n BFP 181W RFs Q62702-F1501 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	59.99K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181 Q62702-F1271
OCR Text	...on BFP 181 RFs Q62702-F1271 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	61.12K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF7168C 7168CT_N
OCR Text	...: Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connect to GND through R ...7 () : f=1.88GHz ZL(Po max)= 2.4-j5.8 () : f=1.88GHz max 1150mA(Po>32.8dBm) Pomax (33.8dBm) ...
Description	UHF BAND GaAs POWER AMPLIFIER From old datasheet system
File Size	75.54K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB420 BGB420E6327
OCR Text	...ng to IC=10*IBias . B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGB420 Data sheet ...7 120 150 -40 ..+85 -65 ... +150 <270 Unit V mA mA V mA mW C C C K/W Notes: For detailed symbol d...
Description	Active Biased Transistor Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 MMIC, LNA
File Size	436.18K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB540
OCR Text	...ng to IC=10*IBias . B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGB540 Data sheet ...7 250 150 -65 ... +150 -65 ... +150 300 Unit V mA mA V mA mW C C C K/W Notes: For detailed symbol...
Description	Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
File Size	95.55K / 10 Page	View it Online	Download Datasheet

For 2.7-3.8ghz Found Datasheets File :: 880 Search Time::5.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |