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Powerex Power Semiconductor...
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS50ASJ-03
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| OCR Text |
.................................. 19m ID ........................................................................................ 50A Integrated Fast Recovery Diode (TYP.) ............ 60ns
q
MP-3
APPLICATION Motor control, Lamp cont... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
ER 25C 25#12 PIN PLUG
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| File Size |
42.48K /
4 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS50SMJ-03 FS3UM-14 FS3UM-14A
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| OCR Text |
.................................. 19m ID ........................................................................................ 50A Integrated Fast Recovery Diode (TYP.) ............ 60ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-3P
... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
40.40K /
4 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS50SMJ-03
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| OCR Text |
.................................. 19m ID ........................................................................................ 50A Integrated Fast Recovery Diode (TYP.) ............ 60ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-3P
... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
45.50K /
4 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRF6602TR1 IRF6602
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| OCR Text |
...s
RDS(on) max
13m@VGS = 10V 19m@VGS = 4.5V
Qg
12nC
20V
MQ
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)
SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6602 combines the latest HEXFET(R) P... |
| Description |
HEXFET Power MOSFET HEXFET功率MOSFET
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package
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| File Size |
188.16K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
PN2369A MMBT2369A MMBT2369ANL
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| OCR Text |
...=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p Itf=.3 Vtf=4 Xtf=4 Rb=10)
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Typical Characteristics
200 - DC CURRENT GAIN
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| Description |
NPN Switching Transistor
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| File Size |
508.24K /
14 Page |
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it Online |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD02MUS1 RD02MUS1-15
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| OCR Text |
...IRCUIT(f=175MHz)
Vgg Vdd
C1 19m m R D 02MVS1 175MHz 3m m 10pF
C2 15m m L3 5m m 3m m 11.5m m 10pF
10uF,50V
4.7kO HM RF-IN 3m m 33m m 6.5m m 12m m L1 39pF 68O HM 240pF
13.5m m 12m m 5m m RF-O UT L2 62pF 43pF
5m m 62pF
L1... |
| Description |
Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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| File Size |
237.02K /
9 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD02MUS2
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| OCR Text |
...IRCUIT(f=175MHz)
Vgg Vdd
C1 19m m
C2 15m m
10uF,50V
4.7kO HM RF-IN 3m m 33m m 6.5m m 12m m L1 39pF 68O HM 240pF
RD02MUS2 R D 02MVS1 175MHz
3m m
10pF
L3 5m m 13.5m m 12m m 5m m RF-O UT L2 62pF 43pF
3m m 11.5m m 10pF... |
| Description |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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| File Size |
239.62K /
9 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXTN23015CFHTA ZXTN23015CFH
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| OCR Text |
19m PD = 1.25W Complementary part number : ZXTP23015CFH typical VCE(SAT) < 30mV @ 1A
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transist... |
| Description |
15V, SOT23, NPN medium power transistor
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| File Size |
142.15K /
6 Page |
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it Online |
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Price and Availability
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