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  1.1us Datasheet PDF File

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    BU4523AX

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU4523AX
OCR Text ...70 kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 123 case isolated ...1us IB2 100R 6V 30-60 Hz 1R VCE t Fig.1. Test circuit for VCEOsust. Fig.4. Switchi...
Description Silicon Diffused Power Transistor 11 A, 800 V, NPN, Si, POWER TRANSISTOR

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    BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 BY329F-1200 BY329X-800 BY329F-1000 BY329F-800 BY329X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BY329X-1000 BY329X-1200 BY329F BY329F-B1200 BY329 BY329F-1200 BY329X-800 BY329F-1000 BY329F-800 BY329X
OCR Text ...VR = 800 V/ 1000 V/ 1200 V k 1 a 2 IF(AV) = 8 A IFSM 65 A trr 145 ns GENERAL DESCRIPTION Glass-passivated double diffused rec...1us T tp T t 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229F 10s Fig.7. Maxi...
Description Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Rectifier diodes fast/ soft-recovery
Rectifier diodes fast, soft-recovery

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    CDSF4148

COMCHIP[Comchip Technology]
Part No. CDSF4148
OCR Text ...) 0.008(R0.20) Typ. 0.055(1.40) 0.047(1.20) 0.040 (1.00) 0.031(0.80) Dimensions in inches and (millimeter) Maximum Rating ( a...1us Tp = 1s Conditions Symbol Min Typ Max Unit VRRM VR Io IFSM PD TSTG Tj -55 4 1 350 +175 +1...
Description SMD Switching Diode

File Size 56.56K  /  2 Page

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    CDSN4148

COMCHIP[Comchip Technology]
Part No. CDSN4148
OCR Text ...gram. (approximately) 0.063 (1.60) 0.055(1.40) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( a...1us Tp = 1s Conditions Symbol Min Typ Max Unit VRRM VR Io IFSM PD TSTG Tj -55 -55 4 1 350 +17...
Description SMD Switching Diode

File Size 44.14K  /  2 Page

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    CDSS4148

COMCHIP[Comchip Technology]
Part No. CDSS4148
OCR Text ... gram. (approximately) 0.055(1.40) 0.047(1.20) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( a...1us Tp = 1s Conditions Symbol Min Typ Max Unit VRRM VR Io IFSM PD TSTG Tj -55 -55 4 1 350 +17...
Description SMD Switching Diode

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    CDSU4148

COMCHIP[Comchip Technology]
Part No. CDSU4148
OCR Text ...stand, high reliability. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603 (1608) standard pack...1uS tp=1mS PD TSTG Tj -40 -40 Conditions Symbol Min Typ Max Unit VRRM VR IO 4 IFSM 1 150 +125...
Description SMD Switching Diode

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    HMM4148

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
HSMC CORP.
Part No. HMM4148
OCR Text ...ed Date : 1999.09.01 Page No. : 1/3 HMM4148 SURFACE MOUNT SWITCHING DIODES Description The HMM4148 is designed for high-speed switch...1us, Rise Time<30ns, fp=5~100kHz Reverse Recovery Time From IF=-IR=10mA to IRR=-1mA, VR=6V, RL=100 T...
Description SURFACE MOUNT SITCHING DIODES

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    PBYL1020 PBYL1025

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PBYL1020 PBYL1025
OCR Text ...RENCE DATA VR = 20 V/ 25 V k 1 a 2 IF(AV) = 10 A VF 0.4 V GENERAL DESCRIPTION Schottky rectifier diodes intended for use as ou...1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.3. Typical and m...
Description Rectifier diodes Schottky barrier

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    PBYL1525CT PBYL1525CTB PBYL1520CT PBYL1520CTB

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PBYL1525CT PBYL1525CTB PBYL1520CT PBYL1520CTB
OCR Text ... IO(AV) = 15 A VF 0.42 V a1 1 k2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in...1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025 Fig.3. Typical and m...
Description Rectifier diodes Schottky barrier(肖特基势垒整流二极管) 7.5 A, 20 V, SILICON, RECTIFIER DIODE

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    PBYR1040CTD PBYR1045CTD

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PBYR1040CTD PBYR1045CTD
OCR Text ... SOT428 DESCRIPTION tab a1 1 k2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in...1us 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV118 10s Fig.3. Typical and ma...
Description SNAP LOCK CABLE MARKER - 7 (100PK) 5 A, 45 V, SILICON, RECTIFIER DIODE
Rectifier diodes Schottky barrier

File Size 38.45K  /  5 Page

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