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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
IGP06N60T
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OCR Text |
...
Features: * Very low VCE(sat) 1.5 V (typ.) * Maximum Junction Temperature 175 C * Short circuit withstand time - 5s * TrenchStop(R) and Fi...10s
2)
Symbol VCE IC
Value 600 12 6 18 18 20 5 88 -40...+175 -55...+175 260
Unit V A
IC... |
Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
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File Size |
327.84K /
12 Page |
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IRF[International Rectifier]
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Part No. |
IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
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OCR Text |
...
n-channel
VCE(on) typ. = 1.80V
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ T...10s
www.irf.com
5
IRGIB15B60KD1
1400 1200
tdOFF
Swiching Time (ns)
1000
1000
Energy... |
Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
275.00K /
12 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRGIB6B60KD
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OCR Text |
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n-channel
VCE(on) typ. = 1.8V
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Exc...10s
www.irf.com
5
IRGIB6B60KD
700 600 EON 500
1000
tdOFF
Swiching Time (ns)
Energy... |
Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
270.40K /
12 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRGIB7B60KD
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OCR Text |
...el Operation.
VCE(on) typ. = 1.8V
TO-220AB FullPak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM I...10s
www.irf.com
5
IRGIB7B60KD
600 500 400
Energy (J)
1000
300 200
EOFF
Swiching... |
Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
432.54K /
12 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SGB15N60HS Q67040-S4535
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OCR Text |
...8 -55...+150 175 220 V s W C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 ...10s V C C 400V, T j 150 C 135 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C =... |
Description |
High Speed IGBT in NPT-technology
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File Size |
321.77K /
11 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
SGW02N120
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OCR Text |
...perature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 C Ptot 50 W tSC 10 s VGE EAS 20 10 V mJ ICpuls Symbol VCE IC 6.2 2.8 9.6 9.6 Value 1200 Unit V A VCE 1200V IC 2A Eoff 0.11mJ Tj 150C Marking Pac... |
Description |
Fast IGBT in NPT-technology
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File Size |
307.92K /
11 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SGW50N60HS
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OCR Text |
...ee lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://...10s
2)
ICpul s EAS
150 150 280 mJ
VGE tSC Ptot Tj , Tstg Tj(tl) -
20 30 10 416 -55...+1... |
Description |
High Speed IGBT in NPT-technology
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File Size |
327.64K /
11 Page |
View
it Online |
Download Datasheet
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Price and Availability
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