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SamHop Microelectronics
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Part No. |
STT08L01
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OCR Text |
...(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =1.25a v ds =20v , i d =1.25a input capa... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
116.00K /
7 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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Part No. |
STF8234
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OCR Text |
...m ) max 20v 14a 5.3 @ vgs=4.0v 5.2 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed ... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Enhancement Mode Field Effect Transistor
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File Size |
93.41K /
6 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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Part No. |
STF8233
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OCR Text |
...m ) max 20v 11a 7.5 @ vgs=4.0v 7.2 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed ... |
Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
97.39K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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