0.5-12ghz pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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0.5-12ghz Datasheet PDF File

For 0.5-12ghz Found Datasheets File :: 379 Search Time::3.266ms
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				Excelics Semiconductor, Inc.
Part No.	EPA160B
OCR Text	...typical power gain at 18ghz 0.3 x 1600 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial heterojunction ...5 5.5 db pae power added efficiency at 1db compression vds=8v, ids=50% ids...
Description	8-12V high efficiency heterojunction power FET
File Size	27.16K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor
Part No.	EFA080A-100F
OCR Text	...5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH ...5 32 MAX UNIT dBm dB % 130 90 210 120 -2.0 -15 -14 58* 300 mA mS -3.5 V V V ...
Description	Low Distortion GaAs Power FET
File Size	26.15K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Excelics Semiconductor, Inc. ETC List of Unclassifed Manufacturers
Part No.	EFA080A-70
OCR Text	...+23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAX...5 6.0 TYP 23.5 23.5 7.0 4.5 30 130 90 210 120 -2.0 -15 -14 135* o MAX UNIT dBm dB % 300 ...
Description	Low Distortion GaAs Power FET
File Size	18.68K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor, Inc.
Part No.	EFA080A
OCR Text	0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND ...5 35 MAX UNIT dBm dB % 130 90 210 120 -2.0 300 mA mS -3.5 V V V o Drain ...
Description	8-12V low distortion GaAs power FET
File Size	28.54K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor
Part No.	EPA160B-100F
OCR Text	...ypical power gain at 12 ghz 0.3 x 1600 micron recessed mushr oom gate si 3 n 4 passivation advanced epitaxial heterojunction ...5 5.5 db pae power added efficiency at 1db compression vds=8v, ids=50% ids...
Description	8-12V high efficiency heterojunction power FET
File Size	26.06K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semicon... Mitsubishi Electric Semiconductor
Part No.	MGF4934AM07 MGF4934AM
OCR Text	...noise figure @ f=12GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICAT...5 -12 -0.1 11.5 -- Limits TYP. ----12.5 0.55 MAX -50 60 -1.5 -0.80 Unit V A mA V dB dB MITS...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	132.86K / 6 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors
Part No.	TC2623
OCR Text	... orsay cedex france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 12ghz super low noise hemt algaas/gaas field effect transistor ...5 db absolute maximum ratings (1) tamb = +25c symbol parameter values unit vds drain to source vol...
Description	12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
File Size	87.11K / 6 Page	View it Online	Download Datasheet

For 0.5-12ghz Found Datasheets File :: 379 Search Time::3.266ms
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