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  0.001 1000 Datasheet PDF File

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    HMA2701 HMA124 HMAA2705 HMA121

Fairchild Semiconductor
Part No. HMA2701 HMA124 HMAA2705 HMA121
OCR Text ... PACKAGE DIMENSIONS PIN 1 0.100 (2.54) TYP 0.020 (0.51) 0.012 (0.30) 0.287 (7.29) 0.248 (6.30) 0.173 (4.40) TYP APPLICATIONS HM...001 0 20 40 60 80 100 120 VCE - COLLECTOR-EMITTER VOLTAGE (V) TA - AMBIEN...
Description FULL PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...001 P DM t1 t2 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effect...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistan...001 0.01 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective T...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...te)** Typ. --- --- Max. 0.85 40 Units C/W www.irf.com 1 02/14/02 IRF1010NS/IRF1010NL Electrical Characteristics @ TJ ...001 0.1 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transi...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.85 --- 62 Units C/W www.irf.com 1 3/16/01 IRF1010N Electrical Characteris...001 0.01 0.1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effe...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...RF1010ZS Max. 94 66 75 360 140 0.90 20 TO-262 IRF1010ZL Units A Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain...001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0....
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... VDSS = 40V G S RDS(on) = 0.009 ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Ef...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...ount) Typ. --- --- Max. 0.74 40 Units C/W www.irf.com 1 07/16/02 IRF1302S/IRF1302L Electrical Characteristics @ TJ = ...001 0.01 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Th...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...mbient (PCB mount) Typ. --- 0.50 --- Max. 0.65 --- 62 Units C/W www.irf.com 1 10/31/02 IRF1302 Electrical Characteris...001 0.01 t1 / t 2 +T C 1 0.02 0.01 J = P DM x Z thJC 0.1 t1, Rectangular Pulse Duration ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... VDSS =100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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