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  .4mh Datasheet PDF File

For .4mh Found Datasheets File :: 320    Search Time::1.953ms    
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    IRFBA22N50A IRFBA22N50

IRF[International Rectifier]
Part No. IRFBA22N50A IRFBA22N50
OCR Text ...SS Starting TJ = 25C, L = 3.4mh RG = 25, I AS = 24A. (See Figure 12) ISD 23A, di/dt 123A/s, VDD V(BR)DSS, TJ 150C IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 2...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)

File Size 104.61K  /  8 Page

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    IRFP3415

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP3415
OCR Text ...= 25V, starting TJ = 25C, L = 2.4mh RG = 25, IAS = 22A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFP3415 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) 功率MOSFET(减振钢板基本\u003d 150伏,的Rdson)\u003d 0.042ohm,身份证\u003d 43A章)
HEXFET? Power MOSFET
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.08K  /  8 Page

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    FQA32N20C

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA32N20C
OCR Text ...m junction temperature 2. L = 1.4mh, IAS = 32A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 32A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description 200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system

File Size 892.56K  /  8 Page

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    FQPF32N20C FQP32N20C

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. FQPF32N20C FQP32N20C
OCR Text ...m junction temperature 2. L = 1.4mh, IAS = 32A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 28A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description 200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET

File Size 1,181.06K  /  10 Page

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    IRFY9130C IRFY9130CM

International Rectifier
Part No. IRFY9130C IRFY9130CM
OCR Text ...= -25V, starting TJ = 25C, L= 6.4mh Peak IL = -11.2A, VGS = -10V ISD -11.2A, di/dt -140A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions -- TO-257AA IR WORLD HEADQUARTERS: 233 Kansas S...
Description POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHANNEL HEXFET? MOSFET TECHNOLOGY

File Size 160.53K  /  7 Page

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    IRL5Y7413CM 2284

IRF[International Rectifier]
Part No. IRL5Y7413CM 2284
OCR Text ...= 25 V, Starting TJ = 25C, L= 1.4mh Peak IAS = 18A, VGS =10V, RG= 25 ISD 18A, di/dt 140 A/s, Pulse width 300 s; Duty Cycle 2% VDD 30V, TJ 150C Case Outline and Dimensions -- TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., ...
Description 30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
HEXFET? POWER MOSFET
From old datasheet system
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)

File Size 101.68K  /  7 Page

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    FQPF17P06

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF17P06
OCR Text ...m junction temperature 2. L = 2.4mh, IAS = -12A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -17A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te...
Description 60V P-Channel MOSFET

File Size 674.32K  /  8 Page

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    FQP4N20L FQP4N20

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP4N20L FQP4N20
OCR Text ...m junction temperature 2. L = 5.4mh, IAS = 3.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 3.8A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tem...
Description 200V LOGIC N-Channel MOSFET

File Size 505.67K  /  8 Page

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    IRFN450 JANTXV2N7228U JANTX2N7228U MIL-PRF-19500_592

IRF[International Rectifier]
Part No. IRFN450 JANTXV2N7228U JANTX2N7228U MIL-PRF-19500_592
OCR Text ...= 25V, starting TJ = 25C, L= 10.4mh Peak IL = 12A, VGS = 10V ISD 12A, di/dt 130A/s, VDD 500V, TJ 150C Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions -- SMD-1 PAD ASSIGNMENTS 1- DRAIN 2- GATE 3- SOURCE I...
Description 500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET SURFACE MOUNT(SMD-1)

File Size 180.94K  /  7 Page

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    IRFI3710

IRF[International Rectifier]
Part No. IRFI3710
OCR Text ...= 25V, starting TJ = 25C, L = 1.4mh RG = 25, IAS = 28A. (See Figure 11) ISD 28A, di/dt 460A/s, VDD V(BR)DSS, TJ 175C IRFI3710 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , D rain-to-S ource C urrent ...
Description HEXFET Power MOSFET
HEXFET? Power MOSFET

File Size 141.24K  /  8 Page

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For .4mh Found Datasheets File :: 320    Search Time::1.953ms    
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