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EUDYNA[Eudyna Devices Inc]
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Part No. |
EMC21L1004 EMC21L1004GN
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OCR Text |
...
+50j +25j
10 25
+100j
+10j
50
2.0GHz
+250j
0
2.1 2.0GHz
2.2 2.1 2.2
-10j
-250j
-25j -50j
-100j
2.2
r P
+90
2.1
im l e
S11 S22
2.0GHz
180 40 Scale for |S21|
Freq [GHz] 1.00 1.10 1... |
Description |
High Voltage - High Power GaN-HEMT Power Amplifier Module
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File Size |
188.71K /
4 Page |
View
it Online |
Download Datasheet
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INTERSIL[Intersil Corporation]
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Part No. |
ISL620907 ISL6209CR ISL6209 ISL6209CB ISL6209CBZ
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OCR Text |
...0V GND - 8V (<20ns Pulse Width, 10J) UGATE Voltage . . . . . . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT VPHASE - 5V (<20ns Pulse Width, 10J) to VBOOT LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V GND - 2.5... |
Description |
High Voltage Synchronous Rectified Buck MOSFET Driver
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File Size |
1,648.01K /
10 Page |
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it Online |
Download Datasheet
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Samsung semiconductor
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Part No. |
K7K1636T2C K7K1618T2C
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OCR Text |
...,10e,11e,2f,3f 11f,2g,3g,11g,3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defined when lo... |
Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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File Size |
440.39K /
19 Page |
View
it Online |
Download Datasheet
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Samsung semiconductor
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Part No. |
K7K1618U2C K7K1636U2C
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OCR Text |
...,10e,11e,2f,3f 11f,2g,3g,11g,3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defined when lo... |
Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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File Size |
454.05K /
19 Page |
View
it Online |
Download Datasheet
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Price and Availability
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