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  -8a Datasheet PDF File

For -8a Found Datasheets File :: 17036    Search Time::1.969ms    
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    2SC4055

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4055
OCR Text 8A NPN OUTLINE DIMENSIONS Case : TO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Storage TemperatureTstg Junction Temperature Tj Collector to Base Voltage V CBO Collector to Emitter Voltage V CEOV = 5V ...
Description Switching Power Transistor(8A NPN)

File Size 386.37K  /  12 Page

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    2SC4056

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4056
OCR Text 8A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Junction TemperatureTj 150 *Z Collector to Base Voltage V 600 V CBO Col...
Description Switching Power Transistor(8A NPN)

File Size 386.82K  /  12 Page

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    2SC4057

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4057
OCR Text 8A NPN OUTLINE DIMENSIONS Case : MTO-3P Unit : mm RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Co...
Description Switching Power Transistor(8A NPN)

File Size 510.73K  /  12 Page

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    AOT8N65

Alpha & Omega Semiconductors
Part No. AOT8N65
OCR Text 8a n-channel mosfet general description product summary v ds i d (at v gs =10v) 8a r ds(on) (at v gs =10v) < 1.15 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot8n65l & aotf8n6...
Description 650V, 8A N-Channel MOSFET

File Size 151.23K  /  6 Page

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    2SC2788

Savantic, Inc.
Part No. 2SC2788
OCR Text ...ration voltage i c =4a ;i b =0.8a 1.0 v v be ( sat) base-emitter saturation voltage i c =4a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =400v ;i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 ...
Description Silicon NPN Power Transistors

File Size 139.76K  /  3 Page

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    SSG4935P

SeCoS Halbleitertechnologie GmbH
Part No. SSG4935P
OCR Text ...21 m ? v gs = -10v, i d = -7.8a - 28 35 v gs = -4.5v, i d = -6.0a forward transconductance a g fs - 22 - s v ds = -10v, i d = -7.8a diode forward voltage v sd - -0.7 -1.2 v i s = -1.7a, v gs = 0v dynamic b total gate charge ...
Description P-Ch Enhancement Mode Power MOSFET

File Size 462.75K  /  4 Page

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    Rohm Co., Ltd.
Part No. RGT30NS65D
OCR Text ...0 125 150 175 i c = 30a i c = 8a i c = 15a v ge = 15v 6/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. data sheet rgt30ns65d l electrical characteristic curves collector to emitter saturation volt...
Description 650V 15A Field Stop Trench IGBT
   650V 15A Field Stop Trench IGBT

File Size 704.08K  /  12 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...0 I D = -1mA, VDS = -10V I D = -8a, VGS = -10V Note4 I D = -8a, VGS = -4V Note4 I D = -8a, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -8a RL = 3.75 2 2SJ530(L),2SJ530(S) Main Characteristics Power vs. Temperatu...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...0 I D = -1mA, VDS = -10V I D = -8a, VGS = -10V Note4 I D = -8a, VGS = -4V Note4 I D = -8a, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1MHz VGS = -10V, I D = -8a RL =3.75 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown volta...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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