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NTE23 78619 MSAU212 U4091B R7400U B614E2T B1010 54ACT
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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116400F-XXSJ MSM5116400F-XXTS-K MSM5116400F-70SJ MSM5116400F-50SJ
OCR Text ...to we hold time (test mode) t wth 10 ? 10 ? 10 ? ns fedd5116400f-01 1 semiconductor msm5116400f 8/15 notes: 1. a start-up delay of 200 s is required after power-up, followed by a minimum of eight initialization cycles ( ras -only refr...
Description 4,194,304-Word 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304词位动态随机存储器:快速页面模式型

File Size 232.63K  /  15 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM51V16800D-50TS-K MSM51V16800DSL-60JS MSM51V16800DSL-70TS-K MSM51V16800DSL-50 MSM51V16800D-60JS
OCR Text ...o we hold time (test mode) t wth 10 9 9 9 10 9 9 10 10 10 10 10 15 15 0 40 85 55 10 10 5 10 10 15 15 0 60 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 10 10 10 10 7 13 13 0 36 73 48 10 10 5 7 7 13 13 0 ...
Description 2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 2097152字8位动态随机存储器:快速页面模式型

File Size 460.10K  /  17 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM514102D-60SJ MSM514102D-60ZS MSM514102D-60TS-K MSM514102D-70SJ MSM514102D-70ZS MSM514102D-XXZS MSM514102DL-70TS-K MSM514102DL-70SJ MSM514102DL-70ZS MSM514102D-70TS-K MSM514102D-80ZS MSM514102DL-60SJ MSM514102DL-80SJ MSM514102D-80TS-K
OCR Text ...t csr t chr t wrp t wrh t wts t wth (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 12, 13 unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns min. 0 0 0 0 10 50 10 20 20 0 15 55 20 35 70 10 5 10 10 10 10 10 max. ...
Description Tape FOIL TAPE KIT
4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE 4194304字1位动态随机存储器:静态列型模

File Size 266.35K  /  18 Page

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    RX1900-4

NTE Electronics
Part No. RX1900-4
OCR Text ...nown hazards and should by used wth caution. although certain hazards are described herein, we cannot guarantee that these are the only hazards which exist. file:///n|/msds/609697mx.htm (8 of 8)1/13/2004 12:05:45 pm
Description ECG Eco Line Flux Remover

File Size 72.09K  /  8 Page

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    RX1100-10 RX1100-12

NTE Electronics
Part No. RX1100-10 RX1100-12
OCR Text ...nown hazards and should by used wth caution. although certain hazards are described herein, we cannot guarantee that these are the only hazards which exist. file:///n|/msds/86544q1e.htm (6 of 6)1/13/2004 12:02:23 pm
Description MATERIAL SAFETY DATA SHEET

File Size 23.73K  /  6 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4E661611D-TC60
OCR Text ...mand hold time (test mode in) t wth 10 10 ns 11 w to ras precharge time ( c -b- r refresh) t wrp 10 10 ns w to ras hold time ( c -b- r refresh) t wrh 10 10 ns output data hold time t doh 5 5 ns output buffer turn off delay from ras...
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16 EDO DRAM, 50 ns, PDSO50

File Size 889.14K  /  36 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM5116805C-50TS-L MSM5116805C-XXJS MSM5116805C-XXTS-L MSM5116805C-XXTS-K MSM5116805C-70TS-K MSM5116805C-50TS-K MSM5116805C-50JS
OCR Text ... wcs t wrp t wrh t wts t cpwd t wth msm5116805 c-60 msm5116805 c-70 msm5116805 c-50 (v cc = 5 v 10%, ta = 0c to 70c) note 1, 2, 3, 12, 13 parameter symbol max. 10 10 10 ns ns ns 10 10 10 10 10 10 note 11 10 10 10 11 10 10 10 ns 10 10 min....
Description 2,097,152-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 2097152字8位动态随机存储器:快速页面模式型与江

File Size 648.38K  /  17 Page

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    HY514400B

Hynix Semiconductor
Part No. HY514400B
OCR Text ...t rps t chs t wrp t wrh t wts t wth 130 -50 10 10 10 10 - - - - - - 150 -50 10 10 10 10 - - - - - - ns ns ns ns ns ns / ras precharge time (self refresh) / cas hold time (self refresh) write command set-up time (test mode in) ...
Description 1M x 4-Bit CMOS DRAM

File Size 85.29K  /  8 Page

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