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Part No.	IRGC3B60KB
OCR Text	wafer form) nominal backmetal composition, (thickness) al - ti - ni/v - ag, (1ka - 1ka - 4ka - 6ka) nominal front metal composition, (thickness) 99% al/1% si, (4m) dimensions 0.085" x 0.090" wafer diameter 150mm, with std. < 100...
Description	600 V, N-CHANNEL IGBT
File Size	47.54K / 1 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	TDA8932B
OCR Text	...gital supply voltage and handle wafer connection positive audio input for channel 1 negative audio input for channel 1 diagnostic output; open-drain engage input to switch between Mute mode and Operating mode power-up input to switch betwee...
Description	The TDA8932B is a high efficiency class-D amplifier with low power dissipation.
File Size	290.94K / 48 Page	View it Online	Download Datasheet


Part No.	IRGC100B120KB
OCR Text	wafer form mechanical data electrical characteristics (wafer form) die outline nominal backmetal composition, (thickness) al - ti - ni/v - ag, (1ka - 1ka - 4ka - 6ka) nominal front metal composition, (thickness) 99% al/1% si, (4m) dimension...
Description	1200 V, N-CHANNEL IGBT
File Size	18.09K / 1 Page	View it Online	Download Datasheet


Part No.	NJU6397AC-D
OCR Text	...ip package outline thin-die/wafer c-mos technology line-up table coordinates starting point:chip center unit[um] chip size:0.7x0.75mm thin-die thickness(c-d): 200 20um thin-die thickness(c...
Description	90 MHz, OTHER CLOCK GENERATOR, UUC6
File Size	75.97K / 5 Page	View it Online	Download Datasheet


Part No.	IRGC49B120UB
OCR Text	wafer form mechanical data electrical characteristics (wafer form) die outline nominal backmetal composition, (thickness) al - ti - ni/v - ag, (1ka - 1ka - 4ka - 6ka) nominal front metal composition, (thickness) 99% al/1% si, (4m) dimension...
Description	1200 V, N-CHANNEL IGBT TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| CHIP
File Size	15.03K / 1 Page	View it Online	Download Datasheet

For wafer Found Datasheets File :: 12511 Search Time::1.157ms
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