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vf1.6v Datasheet PDF File

For vf1.6v Found Datasheets File :: 86 Search Time::1.297ms
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					Sanyo Semicon Device
Part No.	SBS808M
OCR Text	...me Thermal Resistance Symbol VR VF1 VF2 IR C trr Rth(j-a) IR=0.5mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings min 15 0.32 0.39 20 10 138 0.35 0.43...
Description	Schottky Barrier Diode 15V, 1A Rectifier
File Size	29.04K / 3 Page	View it Online	Download Datasheet

					Sanyo Semicon Device
Part No.	SBS004
OCR Text	...me Thermal Resistance Symbol VR VF1 VF2 IR C trr Rth(j-a) IR=1mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 42 15 110 Conditons Ratings min 15 0.30 0.35 0.35 0.40 500 typ max Unit V V V A pF ns Mounted on...
Description	15V/ 1A Rectifier 15V, 1A Rectifier
File Size	37.82K / 3 Page	View it Online	Download Datasheet

					Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	MA30W-A MA30W-B MA30-A MA30 MA30-B
OCR Text	...MA30-A/B MA30W-A/B VF2 -VF / T* VF1 Symbol IR VR= 6V IF=1.5mA IF=10A IF= 3mA IF=1.5mA IF= 3mA 0.56 0.59 0.77 1.18 1.26 2 4.6 1.28 1.36 V mV/C Condition min typ max 1 0.61 0.64 V Unit A Note 1 : Rated input/output frequency : 100MHz 2 : *...
Description	Silicon epitaxial planer type variable resistor SILICON, STABISTOR DIODE
File Size	22.75K / 2 Page	View it Online	Download Datasheet

					Sanyo Semicon Device
Part No.	DCF010
OCR Text	...arameter Forward Voltage Symbol VF1 VF2 VF3 IR1 IR2 C trr IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0V, f=1MHz IF=10mA, VR=6V, RL=50, Irr=0.1Irp Conditions Ratings min typ 0.61 0.74 1.20 0.1 0.5 4.0 4.0 max Unit V V V A A pF ns Reverse Cu...
Description	Silicon Epitaxial Planar Type (Anode Common) Ultrahigh-Speed Switching Diode
File Size	48.31K / 2 Page	View it Online	Download Datasheet

					Sanyo Semicon Device
Part No.	DCG010
OCR Text	...arameter Forward Voltage Symbol VF1 VF2 VF3 IR1 IR2 C trr IF=1mA IF=10mA IF=100mA VR=30V VR=80V VR=0V, f=1MHz IF=10mA, VR=6V, RL=50, Irr=0.1Irp Conditions Ratings min typ 0.60 0.72 1.20 0.1 0.5 3.0 4.0 max Unit V V V A A pF ns Reverse Cu...
Description	Ultrahigh-Speed Switching Diode
File Size	48.50K / 2 Page	View it Online	Download Datasheet

					PANASONIC[Panasonic Semiconductor]
Part No.	MA2ZD02 MA2C196
OCR Text	...ol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 5 V VR = 10 V IF = 10 mA IF = 500 mA VR = 0 ...6V 3V Terminal capacitance Ct (pF) 103 60 50 40 30 20 10 10 1 10-1 -40 0 ...
Description	Silicon epitaxial planar type
File Size	45.62K / 2 Page	View it Online	Download Datasheet

					HITACHI[Hitachi Semiconductor]
Part No.	HSC119
OCR Text	...C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time*1 IR C t rr Min -- -- -- -- -- Typ -- -- -- -- -- ...6V RL=50 Notes 1. Reverse recovery time test circuit DC Supply 0.1F 3k Sampling Rin =50 ...
Description	Silicon Epitaxial Planar Diode for High Speed Switching
File Size	25.74K / 5 Page	View it Online	Download Datasheet

					HITACHI[Hitachi Semiconductor]
Part No.	HSU119
OCR Text	...C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time*1 Note: IR C t rr Min -- -- -- -- -- Typ -- -- -- ...6V RL= 50 1. Reverse recovery time test circuit DC Supply 0.1F 3k Sampling Rin =50 Oscil...
Description	Silicon Epitaxial Planar Diode for High Speed Switching
File Size	25.86K / 5 Page	View it Online	Download Datasheet

					PANASONIC[Panasonic Semiconductor]
Part No.	MA3J702
OCR Text	...ol IR1 IR2 Forward voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 5 V VR = 10 V IF = 10 mA IF = 500 mA VR = 0 ...6V 3V 60 50 40 30 20 10 100 10 1 0.1 -40 0 0 40 80 120 160 200 ...
Description	Silicon epitaxial planar type
File Size	46.32K / 2 Page	View it Online	Download Datasheet

					Isahaya Electronics Corpora... ISAHAYA[Isahaya Electronics Corporation]
Part No.	MC2837
OCR Text	...ERISTICSTa=25 Parameter Symbol VF1 Forward voltage VF2 VF3 Reverse current Pin capacitance Reverse recovery time IR1 IR2 CT trr I F=1mA I F...6V L=50 trr= REVERSE RECOVERY TIME FOR 0.1 r 0 CURRENT WAVE FORM IN DIODE F r 0.1 r rr ...
Description	FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE)
File Size	128.82K / 3 Page	View it Online	Download Datasheet

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