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ONSEMI[ON Semiconductor]
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| Part No. |
2N6667 ON0103
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| OCR Text |
...+1 0 -1 -2 -3 -4 -5 0.1 0.2 0.3 VC for VCE(sat) VB for VBE *IC/IB hFE @ VCE 3
+ 3.0 V
25C to 150C - 55C to 25C
V, VOLTAGE (VOLTS)
...K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095... |
| Description |
DARLINGTON POWER TRANSISTORS(PNP SILICON )
From old datasheet system
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| File Size |
167.86K /
6 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRG4BC40S
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| OCR Text |
...50V 5s PULSE WIDTH A
8 9 10
VC E , Collector-to-Emitter Voltage (V)
VG E , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Cha...k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R ecta... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
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| File Size |
154.81K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGBC40S
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| OCR Text |
... in g Losses (m J)
1 4 .4
VC C VG E TC IC
= 4 80 V = 15 V = 25 C = 3 1A
100
R G = 10 V GE = 15 V V CC = 4 80 V
I C = 62 A I C = 31A I C = 1 6A
1 4 .0
10
1 3 .8
1 3 .6
1 3 .4
1 3 .2 0 10 20 30 40 50 60
... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=31A)
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| File Size |
212.62K /
6 Page |
View
it Online |
Download Datasheet |
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