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  v.6 Datasheet PDF File

For v.6 Found Datasheets File :: 431777    Search Time::5.437ms    
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    MCR106-6 MCR106-8 MCR106-D

ON Semiconductor
Part No. MCR106-6 MCR106-8 MCR106-D
OCR Text ... 1 Amp Volts C C in. lb. 2 3 v 1.0 s) v 1.0 s) v 1.0 s) TO-225AA (formerly TO-126) CASE 077 STYLE 2 Forward Average Gate Power (TC ...6 MCR106-8 Package TO225AA TO225AA Shipping 500/Box 500/Box Operating Junction Temperature Range ...
Description Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate Silicon Controlled Rectifiers

File Size 72.67K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. FS20UM-6
OCR Text v dss ................................................................................ 300v r ds (on) (max) ..................................6 v dss v gss i d i dm p d t ch t stg 10.5max. 4.5 1.3 f 3.6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 50.39K  /  4 Page

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    HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112805F-6 HM5112805FLTD-6 HM5112805FTD-6

Hitachi Semiconductor
Part No. HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112805F-6 HM5112805FLTD-6 HM5112805FTD-6
OCR Text ...OPII. Features * Single 3.3 V supply: 3.3 V 0.3 V * Access time: 60 ns (max) * Power dissipation Active: 720 mW (max) (HM5112805F) 792 mW (max) (HM5113805F) Standby : 3.6 mW (max) (CMOS interface) : 1.8 mW (max) (CMOS interface) (L-v...
Description DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh

File Size 460.85K  /  34 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. MT58L64V32PF-6 MT58L64V32PF-10 MT58L64V36PF-5 MT58L64V36PF-7.5 MT58L128V18PF-5 MT58L128V18PF-10
OCR Text ....3v +0.3v/-0.165v power supply (v dd )  separate +3.3v or +2.5v isolated output buffer supply (v dd q)  snooze mode for reduced-power stan...6 4.0ns/7.5ns/133 mhz -7.5 5ns/10ns/100 mhz -10  configurations 3.3v i/o 128k x 18 mt58l128l18p 64k...
Description 64K X 32 STANDARD SRAM, 3.5 ns, PBGA165
64K X 32 STANDARD SRAM, 5 ns, PBGA165
64K X 36 STANDARD SRAM, 3.5 ns, PBGA165
64K X 36 STANDARD SRAM, 4 ns, PBGA165
128K X 18 STANDARD SRAM, 3.5 ns, PBGA165
128K X 18 STANDARD SRAM, 5 ns, PBGA165

File Size 635.99K  /  25 Page

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    Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Part No. PD684-6 PD679-6 PD680-6 PD679-3T PD684-1T PD680-3T PD683-3T PD683-1T PD683-5T PD679-1T PD680-1T PD680-5T PD683-6 PD679-5T PD680-6T
OCR Text ...akage current per leg @ p i v maxi m u m aver age d. c. output cur r e nt non- repetitive sinusoidal surge (8 .3 m s ) ...6 100 200 300 400 500 600 1. 2v @ 10 a 10 200 - 25 18. 5 1...
Description 10 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
25 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE
10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
10 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE
20 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE
20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
20 A, 500 V, SILICON, BRIDGE RECTIFIER DIODE
25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
10 A, 500 V, SILICON, BRIDGE RECTIFIER DIODE
20 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
25 A, 500 V, SILICON, BRIDGE RECTIFIER DIODE

File Size 194.92K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. WPT2N32-6 WPT2N32-6TR
OCR Text ...tor collector-emitter voltage v ceo -30 v collector-base voltage v cbo -30 v emitter-base voltage v ebo -6 v continues collector current b i c - 1 a pulse collector current c i cm -3 a n-mosfet drain-sour...
Description Single, PNP, -30V, -1A, Power Transistor with 20V N-MOSFET

File Size 400.63K  /  7 Page

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    SAC
Part No. SA145A-XXYYU-6
OCR Text v o i t a g e m a x , v o i t a g e l i n e f r e q u e n c y c u r r e n t c o n t t g u r a t i o n o u t p u t 1 0 0 ?] 2 4 0 v a c 9 0 - 2 6 4 v a c 4 7 ?] 6 3 h z 1 2 0 0 m a , a t 1 0 0 ?] 2 4 0 v a c i e c ?] 3 2 0 , c 8 , ...
Description 36W/45W Switching Adapter

File Size 159.95K  /  3 Page

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    Semtech, Corp.
SEMTECH[Semtech Corporation]
Part No. LC01-6 LC01-6TD
OCR Text ...ction Cap acitance Symbo l VRWM V BR IR VC VC aTVBR Cj V R = 0V, f = 1MHz It = 1mA V RWM = 6V, T=25C IPP = 100A tp = 10/1000 s IPP = 200A tp...6 Units V V A V V mV /C pF a 2000 Semtech Corp. 2 www.semtech.com LC01-6 PROTECTION PRO...
Description Low Capacitance TVS for High-Speed Telecommunication Systems 低电容高二极管高速通信系统

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    FS5KM-6

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS5KM-6
OCR Text ...0 -55 ~ +150 -55 ~ +150 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FS5KM-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DS...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 51.01K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. MH32S72DBFA-6
OCR Text ...le 6 h=high level, l=low level, v=valid, x=don't care, n=clk cycle number note: 1. a7-a9 =0, a0-a6 =mode address command mnemonic cke n-1 cke n /cs /ras /cas /we ba0,1 a11 a10 a0-9 deselect desel h x h x x x x x x x no operation nop h x ...
Description Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to 105 C; Capacitance:8800uF

File Size 964.56K  /  56 Page

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