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u-mosii Datasheet PDF File

For u-mosii Found Datasheets File :: 74 Search Time::1.594ms
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					Toshiba Semiconductor
Part No.	TPC830506
OCR Text	u-mosii) TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package : RDS (ON) = 24 m (typ.) High forward transfer admittance : \|Yfs\| = 12 S (typ.) Lo...
Description	Lithium Ion Battery ApplicationsPortable Equipment ApplicationsNotebook PC Applications
File Size	1,060.98K / 7 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK112009
OCR Text	...e and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please...
Description	DC−DC Converter and Motor Drive Applications
File Size	406.85K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK323609
OCR Text	u-mosii) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications * * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: \|Yfs\| = 42 S (typ.) Low...
Description	Switching Regulator Applications, DC-DC Converter and
File Size	170.21K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK135909
OCR Text	...e and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please...
Description	DC−DC Converter and Motor Drive Applications
File Size	404.53K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK339709
OCR Text	u-mosii) 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: \|Yfs\| = 110 S (typ.) Low leakage current: IDSS = 10 A (max...
Description	Relay Drive and DC-DC Converter Applications
File Size	198.67K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3440 2SK344009
OCR Text	u-mosii) 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance: \|Yfs\| = 30 S (typ.) Low leakage current: IDSS...
Description	Switching Regulator, DC-DC Converter Applications
File Size	177.37K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3441 2SK344109
OCR Text	u-mosii) 2SK3441 DC-DC Converter Applications Relay Drive and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 4.5 m (typ.) High forward transfer admittance: \|Yfs\| = 80 S (typ.) Low leakage current: IDSS = 10...
Description	DC-DC Converter Applications
File Size	178.50K / 6 Page	View it Online	Download Datasheet

					TOSHIBA
Part No.	K3236
OCR Text	u-mosii) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications * * * * * 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: \|Yfs\| = 42 S (typ.) Low...
Description	Search ---To 2SK3236
File Size	296.50K / 6 Page	View it Online	Download Datasheet

					Toshiba Corporation Toshiba Semiconductor
Part No.	TPC8003
OCR Text	u ? mosii) tpc8003 lithium ion battery applications portable equipment applications notebook pc applications small footprint due to small and thin package low drain ? source on resistance : r ds (on) = 5.4 m ? (typ.) ...
Description	Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) Field Effect Transistor Silicon N Channel MOS Type (u-mosii)
File Size	497.04K / 7 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SK3439 2SK343906
OCR Text	u-mosii) 2SK3439 DC-DC Converter Applications Relay Drive and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.8 m (typ.) High forward transfer admittance: \|Yfs\| = 70 S (typ.) Low leakage current: IDSS = 10...
Description	Silicon N Channel MOS Type DC-DC Converter Applications
File Size	178.64K / 6 Page	View it Online	Download Datasheet

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