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  sram.5v Datasheet PDF File

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    ICY7C1373C-100BGI CY7C1371C CY7C1371C-133AC CY7C1371C-100AC CY7C1371C-100AI CY7C1371C-100BGC CY7C1371C-100BGI CY7C1371C-

CYPRESS[Cypress Semiconductor]
Part No. ICY7C1373C-100BGI CY7C1371C CY7C1371C-133AC CY7C1371C-100AC CY7C1371C-100AI CY7C1371C-100BGC CY7C1371C-100BGI CY7C1371C-100BZC CY7C1371C-100BZI CY7C1371C-117AC CY7C1371C-117AI CY7C1371C-117BGC CY7C1371C-117BGI CY7C1371C-117BZC CY7C1371C-117BZI CY7C1371C-133AI CY7C1371C-133BGC CY7C1371C-133BGI CY7C1371C-133BZC CY7C1371C-133BZI CY7C1373C CY7C1373C-100AC CY7C1373C-100AI CY7C1373C-100BGC CY7C1373C-100BZC CY7C1373C-100BZI CY7C1373C-117AC CY7C1373C-117AI CY7C1373C-117BGC CY7C1373C-117BGI CY7C1373C-117BZC CY7C1373C-117BZI CY7C1373C-133AC CY7C1373C-133AI CY7C1373C-133BGC CY7C1373C-133BGI CY7C1373C-133BZC CY7C1373C-133BZI
OCR Text SRAM with NoBLTM Architecture Features * No Bus LatencyTM (NoBLTM) architecture eliminates dead cycles between write and read cycles * Can...5V I/O power supply * Fast clock-to-output times -- 6.5 ns (for 133-MHz device) -- 7.5 ns (for 117-M...
Description 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture

File Size 537.31K  /  33 Page

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    M68AF031A M68AF031AL55B1E M68AF031AL55B1F M68AF031AL55B1T M68AF031AL55B6E M68AF031AL55B6F M68AF031AL55B6T M68AF031AL55MS

SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. M68AF031A M68AF031AL55B1E M68AF031AL55B1F M68AF031AL55B1T M68AF031AL55B6E M68AF031AL55B6F M68AF031AL55B6T M68AF031AL55MS1E M68AF031AL55MS1F M68AF031AL55MS1T M68AF031AL55MS6E M68AF031AL55MS6F M68AF031AL55MS6T M68AF031AL55N1E M68AF031AL55N1F M68AF031AL55N1T M68AF031AL55N6E M68AF031AL55N6F M68AF031AL55N6T M68AF031AL55NS1E M68AF031AL55NS1F M68AF031AL55NS1T M68AF031AL55NS6E M68AF031AL55NS6F M68AF031AL55NS6T M68AF031AL70B1E M68AF031AL70B1F M68AF031AL70B1T M68AF031AL70B6E M68AF031AL70B6F M68AF031AL70B6T M68AF031AL70MS1E M68AF031AL70MS1F M68AF031AL70MS1T M68AF031AL70MS6E M68AF031AL70MS6F M68AF031AL70MS6T M68AF031AL70N1E M68AF031AL70N1F M68AF031AL70N1T M68AF031AL70N6E M68AF031AL70N6F M68AF031AL70N6T M68AF031AL70NS1E M68AF031AL70NS1F M68AF031AL70NS1T M68AF031AL70NS6E M68AF031AL70NS6F M68AF031AL70NS6T M68AF031AM55B1E M68AF031AM55B1F M68AF031AM55B1T M68AF031AM55B6E M68AF031AM55B6F M68AF031AM55B6T M68AF031AM55MS1E M68AF031AM55MS1F M68AF031AM55MS1T M68AF031AM55MS6E M68AF031AM55MS6F M68AF031AM55MS6T M68AF031AM55N1E M68AF031AM55N1F M68AF031AM55N1T M68AF031AM55N6E M68AF031AM55N6F M68AF031AM55N6T M68AF031AM55NS1E M68AF031AM55NS1F M68AF031AM55NS1T M68AF031AM55NS6E M68AF031AM55NS6F M68AF031AM55NS6T M6
OCR Text SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 4.5 to 5.5V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O AUTOMATIC POWER DOWN PACKAGES - SO...
Description 256 Kbit (32K x 8) 5.0V Asynchronous SRAM 256千位2K的85.0V异步SRAM
256 Kbit (32K x 8) 5.0V Asynchronous SRAM 256千位2K的8.0V异步SRAM
CONN PLUG .100 30POS DL PCB R/A 256千位2K的8.0V异步SRAM
CONN PLUG .100 10POS DL PCB R/A

File Size 146.42K  /  22 Page

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    TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F008S5-120 PA28F008S5-85 PA28F016S5-120 PA28F016S5-95 TB28F008S5-100 TE2

INTEL[Intel Corporation]
Part No. TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F008S5-120 PA28F008S5-85 PA28F016S5-120 PA28F016S5-95 TB28F008S5-100 TE28F004S5-100 E28F008S5-85 E28F008S5-120 E28F016S5-95 E28F016S5-120 TE28F008S5-100 28F004S5 E28F004S5-120 E28F004S5-85 TB28F004S5-100 TB28F016S5-110
OCR Text ...User Interface Status Register SRAM-Compatible Write Interface ETOXTM V Nonvolatile Flash Technology n n Intel's byte-wide Smart 5 Fl...5V systems, Smart 5 FlashFile components support read operations at 5V VCC and block erase and progr...
Description BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 8 AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT

File Size 480.55K  /  37 Page

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    TE28F016SC-110 PA28F004SC-120 PA28F004SC-85 PA28F008SC-120 PA28F008SC-85 PA28F016SC-120 PA28F016SC-95 TB28F008SC-100 TE2

INTEL[Intel Corporation]
Part No. TE28F016SC-110 PA28F004SC-120 PA28F004SC-85 PA28F008SC-120 PA28F008SC-85 PA28F016SC-120 PA28F016SC-95 TB28F008SC-100 TE28F004SC-100 G28F008SC-120 E28F008SC-120 28F004SC E28F004SC-120 E28F004SC-85 E28F008SC-85 E28F016SC-120 E28F016SC-95 G28F008SC-150 G28F016SC-120 G28F016SC-150 TB28F004SC-100 TB28F016SC-110 TE28F008SC-100
OCR Text ...User Interface Status Register SRAM-Compatible Write Interface ETOXTM V Nonvolatile Flash Technology n n Intel's byte-wide SmartVolta...5V VPP Voltage 3.3 V, 5 V, 12 V 5 V, 12 V New Features The byte-wide SmartVoltage FlashFile m...
Description BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT

File Size 697.63K  /  42 Page

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    ZR36015 ZR36015PQC-30

ETC
Part No. ZR36015 ZR36015PQC-30
OCR Text ...uses a double buffered external SRAM Strip Buffer to support raster to/from block conversion and block interleave. The maximum number of pixels that can be processed per line is 8K. The maximum number of lines that can be prcessed per image...
Description RASTER TO BLOCK CONVERTER

File Size 164.91K  /  27 Page

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    DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-7

DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
Part No. DS1270AB DS1270AB-100 DS1270AB-100IND DS1270AB-70 DS1270AB-70IND DS1270Y DS1270Y-100 DS1270Y-100IND DS1270Y-70 DS1270Y-70IND
OCR Text SRAM www.maxim-ic.com FEATURES 5 years minimum data retention in the absence of external power Data is automatically protected during p...5V) - Ground - No Connect DESCRIPTION The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully...
Description (DS1270AB/Y) 16M Nonvolatile SRAM

File Size 164.69K  /  8 Page

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    DS1270W

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Dallas Semiconducotr
Part No. DS1270W
OCR Text SRAM www.maxim-ic.com FEATURES Five years minimum data retention in the absence of external power Data is automatically protecte...5V, a power-switching circuit connects the lithium energy source to RAM to retain data. During power...
Description 3.3V 16Mb Nonvolatile SRAM

File Size 153.45K  /  8 Page

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    HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIX[Hynix Semiconductor]
http://
Part No. HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62256ALP-I HY62256ALR1 HY62256ALR2-I HY62256ALT1 HY62256ALT1-I HY62256AP HY62256AP-I HY62256AR1 HY62256AR2-I HY62256AT1 HY62256AT1-I HY62256AJ-55 HY62256AJ-85 HY62256AJ-I-70 HY62256AJ-I-55 HY62256AJ-I-85 HY62256ALJ-85 HY62256ALJ-I-70 HY62256ALLJ-85 HY62256ALLJ-55 HY62256ALLJ-70 HY62256AJ-70 HY62256ALJ-I-85 HY62256ALLP-55
OCR Text sram/62256ald1 http://www.hea.com/hean2/sram/62256ald1.htm HY62256A-(I) Series 32Kx8bit CMOS SRAM Description Features The Fully...5V ?% TA = 0C to 70C (Normal) / -40C to 85C (E.T.) unless otherwise specified Symbol ILI ILO Paramet...
Description 32Kx8bit CMOS SRAM, standby current=25uA, 70ns
32Kx8bit CMOS SRAM, standby current=25uA, 55ns
32Kx8bit CMOS SRAM, standby current=25uA, 85ns
32Kx8bit CMOS SRAM, standby current=100uA, 70ns
32Kx8bit CMOS SRAM, standby current=100uA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 70ns
32Kx8bit CMOS SRAM, standby current=1mA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 55ns
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM
JT 22C 22#22D SKT RECP
   32Kx8bit CMOS SRAM

File Size 819.02K  /  14 Page

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    K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C K6E0808C1C-JC12
OCR Text SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Prelimi...5V See below CMOS SRAM Output Loads(A) +5V 480 DOUT 255 30pF* Output Loads(B) for tHZ, tLZ,...
Description 32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM

File Size 166.89K  /  8 Page

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ...ature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Rele...5V See below Output Loads(A) +5V 480 DOUT 255 30pF* Output Loads(B) for tHZ, tLZ, tWHZ, tOW, t...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

File Size 180.35K  /  9 Page

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