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  self-leaded Datasheet PDF File

For self-leaded Found Datasheets File :: 665    Search Time::1.391ms    
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J52324QC-BJ14
OCR Text ...or masking write data ? auto & self refresh modes ? auto precharge option ? 32ms, auto refresh (8k cycle) ? 136 ball fbga ? maximum clock frequency up to 800mhz ? maximum data rate up to 1.6gbps/pin ? dll for outputs ? boundary sc...
Description 512Mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM

File Size 1,253.79K  /  57 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY5V26ELF-5I
OCR Text ...ks operation ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4, 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency; 2, 3 clo...
Description 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PBGA54

File Size 177.19K  /  12 Page

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    224RSB202K2H 104PSB850K2G 154PSB850K2G 224PSB850K2H 683PSB850K2G 334PSB850K2H 223PSB202K2G 683PSB202K2H 334PSB202K2J 333

Illinois Capacitor, Inc.
Illinois Capacitor, Inc...
Part No. 224RSB202K2H 104PSB850K2G 154PSB850K2G 224PSB850K2H 683PSB850K2G 334PSB850K2H 223PSB202K2G 683PSB202K2H 334PSB202K2J 333PSB202K2G 473PSB202K2G 473PSB202K2H 224PSB202K2J 153PSB202K2G 333PSB202K2H 154PSB202K2H 104PSB202K2H 154PSB202K2J 472PSB302K2G 103PSB302K2G 153PSB302K2G 103PSB302K2H 153PSB302K2H 473PSB302K2H
OCR Text self healing ? stable with frequency and temperature ? high dvdt ? good pulse current ratings applications ? power semiconduc...leaded metallized polypropylene film capacitors wvdc all < 850 850<v<2000 2500 ...
Description Radial leaded metallized polypropylene film capacitors

File Size 743.30K  /  7 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4T56043QF-ZCD5
OCR Text ...ovides precharge power-down and self refresh operation (all banks idle), or active powe r-down (row active in any bank). cke is syn- chronous for power down entry and exit, and for self refresh entry. cke is asynchronous for self refresh ex...
Description 256Mb F-die DDR2 SDRAM
OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片

File Size 479.59K  /  27 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E-F1H K4M511533E-F1L K4M511533E-F75 K4M511533E-L K4M511533E-Y K4M511533E-YC K4M511533E-YP K4M511533E-YF1H0 K4M511533E-YC1L0 K4M511533E-YL1L0 K4M511533E-PF750 K4M511533E-YC750
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded , -PXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M511533E is 536,870,912 b...
Description Mobile-SDRAM 移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 104.22K  /  12 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163LH-G K4S64163LH-F1L K4S64163LH-C K4S64163LH K4S64163LH-F1H K4S64163LH-F75 K4S64163LH-L K4S64163LH-RL1H0
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4S64163LH is 67,108,864 bit...
Description 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70

File Size 110.46K  /  12 Page

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    HOLT INTEGRATED CIRCUITS INC
Part No. HI-8110PQIF
OCR Text ...f 2 modes; externally driven or self-oscillating. when the lcd? input is externally driven with the lcd?opt input open circuit (figure 2), t...leaded chip carrier 40 48 hi-8010/hi-8110 series holt integrated circuits 7 hi-8010/hi-8110 packag...
Description LIQUID CRYSTAL DISPLAY DRIVER, PQFP52

File Size 90.45K  /  9 Page

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    Samsung Semiconductor Co., Ltd.
Part No. K4M64163PH-RG750
OCR Text ...rt. -. pasr (partial array self refresh). -. internal tcsr (temperature compensated self refresh) -. ds (driver strength) ? ...leaded, -bxxx : lead free) features the k4m64163ph is 67,108,864 bits synchronous high data ra...
Description 4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54

File Size 114.07K  /  12 Page

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    K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S64323LH-FC1L K4S64323LH-FC60 K4S64323LH-FC75 K4S64323LH-FE1H K4S64323LH-FE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S64323LH-FC1L K4S64323LH-FC60 K4S64323LH-FC75 K4S64323LH-FE1H K4S64323LH-FE1L K4S64323LH-FE75 K4S64323LH-FF1H K4S64323LH-FF1L K4S64323LH-FF60 K4S64323LH-FF75 K4S64323LH-FG1H K4S64323LH-FG1L K4S64323LH-FG60 K4S64323LH-FG75 K4S64323LH-FL1H K4S64323LH-FL1L K4S64323LH-FL60 K4S64323LH-FL75 K4S64323LH-FN1H K4S64323LH-FN1L K4S64323LH-FN60 K4S64323LH-FN75 K4S64323LH-HC1H K4S64323LH-HC1L K4S64323LH-HC60 K4S64323LH-HC75 K4S64323LH-HE1H K4S64323LH-HE1L K4S64323LH-HE60 K4S64323LH-HE75 K4S64323LH-HF1H K4S64323LH-HF1L K4S64323LH-HF60 K4S64323LH-HF75 K4S64323LH-HG1H K4S64323LH-HG1L K4S64323LH-HG60 K4S64323LH-HG75 K4S64323LH-HL1H K4S64323LH-HL1L K4S64323LH-HL60 K4S64323LH-HL75 K4S64323LH-HN1H K4S64323LH-HN1L K4S64323LH-HN60 K4S64323LH-FE60 K4S64323LH-FF1H0 K4S64323LH-FF1L0 K4S64323LH-FF750 K4S64323LH-FC1H0 K4S64323LH-FN1L0 K4S64323LH-HL1L0
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -HXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4S64323LH is 67,108,864 bit...
Description 2M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Dual Rail-To-Rail Micropower Operational Amplifier 8-PDIP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-TSSOP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 12k × 32Bit的4银行0FBGA移动SDRAM

File Size 139.23K  /  12 Page

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    K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M56323LE-EC1L K4M56323LE-EC80 K4M56323LE-EE1H K4M56323LE-EE1L K4M56323LE-EE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M56323LE-EC1L K4M56323LE-EC80 K4M56323LE-EE1H K4M56323LE-EE1L K4M56323LE-EE80 K4M56323LE-EL1H K4M56323LE-EL1L K4M56323LE-EL80 K4M56323LE-EN1H K4M56323LE-EN1L K4M56323LE-EN80 K4M56323LE-ER1H K4M56323LE-ER1L K4M56323LE-ER80 K4M56323LE-ES1H K4M56323LE-ES1L K4M56323LE-ES80 K4M56323LE-MC1H K4M56323LE-MC1L K4M56323LE-MC80 K4M56323LE-ME1H K4M56323LE-ME1L K4M56323LE-ME80 K4M56323LE-ML1H K4M56323LE-ML1L K4M56323LE-MN1H K4M56323LE-MN1L K4M56323LE-MN80 K4M56323LE-MR1H K4M56323LE-MR1L K4M56323LE-MR80 K4M56323LE-MS1H K4M56323LE-MS1L K4M56323LE-ML80
OCR Text ...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M56323LE is 268,435,456 bi...
Description 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
RES 180K 5% 0603
Surface Mount Resistors Thick Film Chip Resistors

File Size 139.56K  /  12 Page

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