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  pulse high Datasheet PDF File

For pulse high Found Datasheets File :: 201708    Search Time::3.656ms    
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    Ruilongyuan Electronics...
Part No. RLST23A282LV
OCR Text ... information. ? 400 watts peak pulse power (tp = 8/20s) ? transient protection for high speed data lines to iec 61000-4-2 (esd) 15kv (air), 8kv (contact) iec 61000-4-4 (eft) 40a (5/50ns) iec 61000-4-5 (lightning) 24a (8/20s) ? o...
Description TVS/ESD Arrays

File Size 813.00K  /  9 Page

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    Ruilongyuan Electronics...
Part No. RLST23A2.82LV
OCR Text ... information. ? 400 watts peak pulse power (tp = 8/20s) ? transient protection for high speed data lines to iec 61000-4-2 (esd) 15kv (air), 8kv (contact) iec 61000-4-4 (eft) 40a (5/50ns) iec 61000-4-5 (lightning) 24a (8/20s) ? o...
Description TVS/ESD Arrays

File Size 530.14K  /  9 Page

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    MC74LVQ74 MC74LVQ74D MC74LVQ74DT MC74LVQ74M MC74LVQ74SD

Motorola, Inc
Part No. MC74LVQ74 MC74LVQ74D MC74LVQ74DT MC74LVQ74M MC74LVQ74SD
OCR Text ...3 14 1 pin names function clock pulse inputs data inputs direct clear inputs direct set inputs outputs pins cp1, cp2 d1, d2 cd1 , cd2 sd1 , ...high voltage level; h = high voltage level one setup time prior to the lowtohigh clock transition; l...
Description LOW-VOLTAGE CMOS DUAL D-TYPE FLIP-FLOP

File Size 146.49K  /  9 Page

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    M/A-COM Technology Solu...
Part No. MAGX-003135-120L00 MAGX-003135-120L00-15
OCR Text pulse, 10% duty rev. v2 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the p...high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide ...
Description GaN on SiC HEMT pulsed Power Transistor

File Size 605.31K  /  7 Page

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    EFM32G

Silicon Laboratories
Part No. EFM32G
OCR Text ... interface general purpose i/o pulse counter real time counter usart low energy uart tm silabs.com | building a more connected world. rev. 2.10 1. feature list ? arm cortex-m3 cpu platform ? high performance 32-bit processor @ up t...
Description ARM Cortex-M3 at 32 MHz

File Size 3,213.83K  /  205 Page

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    NJVMJD243T4G MJD253-1G

ON Semiconductor
Part No. NJVMJD243T4G MJD253-1G
OCR Text ... under different conditions. 3. pulse test: pulse width = 300 s, duty cycle 2%. 4. f t = ? h fe ?? f test . mjd243 (npn), mjd253...high case temperatures, thermal limitations will reduce the power that can be handled to values less...
Description Complementary Silicon Plastic Power Transistors

File Size 108.24K  /  8 Page

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    MJD200-13

ON Semiconductor
Part No. MJD200-13
OCR Text ...mjd210t4g c ob ? ? 80 120 pf 3. pulse test: pulse width = 300 s, duty cycle 2%. 4. f t = ? h fe ?? f test . mjd200 (npn), mjd210...high case temperatures, thermal limitations will reduce the power that can be handled to values less...
Description Complementary Plastic Power Transistors

File Size 138.67K  /  7 Page

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    IXTQ3N150M

IXYS Corporation
Part No. IXTQ3N150M
OCR Text ... 1.83 a i dm t c = 25 ? c, pulse width limited by t jm 9.00 a i a t c = 25 ? c 3 a e as t ...high power density ? easy to mount ? space savings applications ? high voltage power supplies ? capa...
Description N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

File Size 177.09K  /  5 Page

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    Renesas Electronics Corporation
Part No. RJK5003DPD-15
OCR Text ...5 a drain peak current i d (pulse) note1 20 a avalanche current i ap 5 a l = 200 ? h channel dissipation pch 62.5 w cha...high quality", and "specific". the recommended applications for each renesas electronics product d...
Description Silicon N Channel Power MOS FET high Speed Power Switching Use

File Size 85.75K  /  7 Page

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For pulse high Found Datasheets File :: 201708    Search Time::3.656ms    
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