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  ptf Datasheet PDF File

For ptf Found Datasheets File :: 413    Search Time::1.875ms    
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    Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. ptf10045
OCR Text ptf 10045 30 Watts, 1.60-1.65 GHz GOLDMOSTM Field Effect Transistor Description The ptf 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. It is rated at 30 wat...
Description 30 Watts, 1.60.65 GHz GOLDMOS Field Effect Transistor
30 Watts 1.60-1.65 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor

File Size 206.38K  /  6 Page

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    PTF10048

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. ptf10048
OCR Text ptf 10048 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS (R) Field Effect Transistor Description The ptf 10048 is an internally matched 30-watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10....
Description 30 Watts, 2.1.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor
30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor

File Size 232.19K  /  6 Page

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    PTF102027

Ericsson Microelectronics
Part No. ptf102027
OCR Text ptf 102027 40 Watts, 925-960 MHz GOLDMOS (R) Field Effect Transistor Description The ptf 102027 is a 40-watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical...
Description 40 Watts, 92560 MHz GOLDMOS Field Effect Transistor
40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR

File Size 205.81K  /  6 Page

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    PTF10020

Ericsson
Part No. ptf10020
OCR Text ptf 10020 125 Watts, 860-960 MHz GOLDMOSTM Field Effect Transistor Description The ptf 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation an...
Description 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 114.39K  /  6 Page

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    Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. ptf102028
OCR Text ptf 102028 18 Watts, 860-960 MHz GOLDMOS (R) Field Effect Transistor Description The ptf 102028 is an 18-watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nit...
Description 18 Watts, 86060 MHz GOLDMOS Field Effect Transistor
18 Watts 860-960 MHz GOLDMOS Field Effect Transistor
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 218.04K  /  7 Page

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    SG-636PTF SG-636PCE SG-636PCW SG-636PH SG-636PHW SG-636PTG SG-636PTW SG-636SCE SG-636SCG SG-636SCW SG-636 SG-636PCG SG-6

Electronic Theatre Controls, Inc.
Epson ToYoCom
ETC[ETC]
List of Unclassifed Manufacturers
Part No. SG-636ptf SG-636PCE SG-636PCW SG-636PH SG-636PHW SG-636PTG SG-636PTW SG-636SCE SG-636SCG SG-636SCW SG-636 SG-636PCG SG-636PDE SG-636PHG SG-636SHW SG-636STW
OCR Text ...L load: 1.4 V level IOH =-8 mA (ptf) /-4 mA (PH / SCE / PCE / PDE) IOL =16 mA (ptf) /4 mA (PH / SCE / PCE / PDE) 30 pF Max. -- 15 pF Max. CL<15 pF _ 5 LSTTL Max. Output enable/disable input voltage Output rise time Output fall...
Description Tantalum Molded Capacitor; Capacitance: 100uF; Voltage: 4V; Case Size: 3.5x2.8 mm; Packaging: Tape & Reel 高频晶体振荡
Tantalum Molded Capacitor; Capacitance: 10uF; Voltage: 4V; Case Size: 4x3.2 mm; Packaging: Tape & Ammo 高频晶体振荡
HIGH-FREQUENCY CRYSTAL OSCILLATOR 高频晶体振荡
Tantalum Molded Capacitor; Capacitance: 22uF; Voltage: 4V; Case Size: 2x1.3 mm; Packaging: Tape & Reel
Tantalum Molded Capacitor; Capacitance: 10uF; Voltage: 4V; Case Size: 4x3.2 mm; Packaging: Tape & Ammo
Tantalum Molded Capacitor; Capacitance: 2.2uF; Voltage: 4V; Case Size: 2x1.3 mm; Packaging: Tape & Reel
Tantalum Molded Capacitor; Capacitance: 3.3uF; Voltage: 4V; Case Size: 2x1.25 mm; Packaging: Tape & Ammo
Tantalum Molded Capacitor; Capacitance: 100uF; Voltage: 4V; Case Size: 3.5x2.8 mm; Packaging: Tape & Reel
Tantalum Molded Capacitor; Capacitance: 3.3uF; Voltage: 4V; Case Size: 4x3.2 mm; Packaging: Tape & Ammo

File Size 64.40K  /  2 Page

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    ERICSSON[Ericsson]
Part No. ptf10154
OCR Text ptf 10154 85 Watts, 1.93-1.99 GHz GOLDMOS (R) Field Effect Transistor Description The ptf 10154 is an internally matched 85-watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% effici...
Description 85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor

File Size 255.49K  /  5 Page

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    ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. ptf10007
OCR Text ptf 10007 35 Watts, 1.0 GHz GOLDMOS (R) Field Effect Transistor Description The ptf 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride sur...
Description 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor

File Size 234.16K  /  6 Page

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    PTF10162

ERICSSON[Ericsson]
Part No. ptf10162
OCR Text ptf 10162 18 Watts, 860-960 MHz GOLDMOSTM Field Effect Transistor Description The ptf 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Ni...
Description 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 340.43K  /  8 Page

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    PTF10120

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. ptf10120
OCR Text ptf 10120 120 Watts, 1.8-2.0 GHz GOLDMOSTM Field Effect Transistor Description The ptf 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It ...
Description 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor 120瓦,1.8-2.0 GHz的GOLDMOS场效应晶体管
120 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor

File Size 419.28K  /  6 Page

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For ptf Found Datasheets File :: 413    Search Time::1.875ms    
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