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Alliance Semiconductor, Corp.
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| Part No. |
AS4C256K16E0-30JC AS4C256K16E0-35JC
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| OCR Text |
...cle time 65 ?70?85?ns t rp ras precharge time 25 ?25?25?ns t ras ras pulse width 30 75k 35 75k 50 75k ns t cas cas pulse width 5 ?6?10?ns t rcd ras to cas delay time 15 20 16 24 15 35 ns 6 t rad ras to column address delay time 10 14... |
| Description |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM（江户）
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| File Size |
521.73K /
24 Page |
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it Online |
Download Datasheet
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Winbond Electronics, Corp.
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| Part No. |
W942508CH-75
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| OCR Text |
.................... .. 24 9.5 precharge...................................................................................................................... ..... 24 9.6 burst termination................................................. |
| Description |
8M x 4 BANKS x 8 BIT DDR SDRAM 32M X 8 DDR DRAM, 0.75 ns, PDSO66
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| File Size |
1,321.04K /
47 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
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| Part No. |
MH4S64CBMD-12B MH4S64CBMD-10
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| OCR Text |
...memory in computer systems auto precharge / all bank precharge controlled by a10 burst type- sequential / interleave(programmable) column access - random lvttl interface auto refresh and self refresh 4096 refresh cycle /64ms clk access time... |
| Description |
268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM 268435456位（4194304字，64位）SynchronousDRAM
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| File Size |
722.76K /
47 Page |
View
it Online |
Download Datasheet |
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