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  mrs Datasheet PDF File

For mrs Found Datasheets File :: 2381    Search Time::1.297ms    
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    VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8

VML[Vanguard International Semiconductor]
Part No. VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text ... LF SE Mode Register Set mrs IDLE LF SE it ex REF AUTO Refresh CK E KE C ROW ACTIVE BS T ACT Power Down CKE CKE T BS Active Power Down ad Re W r it e Au Write to p red with har ge h wit...
Description CMOS Synchronous Dynamic RAM
File Size 1,124.02K  /  69 Page

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    VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG3617801CT

VML[Vanguard International Semiconductor]
Part No. VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG3617801CT
OCR Text ... LF SE Mode Register Set mrs IDLE LF SE it ex REF AUTO Refresh CK E E CK ROW ACTIVE BS T ACT Power Down CKE CKE T BS Active Power Down ad Re W rit e Au Write to p red with har ge h wit ...
Description 16Mb CMOS Synchronous Dynamic RAM
File Size 1,003.20K  /  68 Page

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    VG36256161A VG36256401A VG36256801A

VML[Vanguard International Semiconductor]
Part No. VG36256161A VG36256401A VG36256801A
OCR Text ... LF SE Mode Register Set mrs IDLE LF SE REF AUTO Refresh CK E CK E Power Down ROW ACTIVE BS T ACT CKE CKE Active Power Down T BS Au Write to p rec with har ge e rit W Write (Write recovery) ...
Description CMOS Synchronous Dynamic RAM
File Size 941.72K  /  69 Page

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    VG36648041BT-10 VG36648041BT-7 VG36648041BT-8 VG36648041CT

VML[Vanguard International Semiconductor]
Part No. VG36648041BT-10 VG36648041BT-7 VG36648041BT-8 VG36648041CT
OCR Text ... LF SE Mode Register Set mrs IDLE LF SE REF AUTO Refresh CK E E CK ROW ACTIVE BS T ACT Power Down CKE CKE T BS Active Power Down ad Re W rit e Au Write to p red with har ge h wit rge ad ch...
Description CMOS Synchronous Dynamic RAM
File Size 946.09K  /  70 Page

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    K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4S641632F-TC60 K4S641632F-TC75 K4S641632F-TL75 K4S641632F K4S641632F-TC1H K4S641632F-TC1L K4S641632F-TC50 K4S641632F-TC55 K4S641632F-TL1H K4S641632F-TL1L K4S641632F-TL50 K4S641632F-TL60
OCR Text ...ed address Four banks operation mrs cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system cloc...
Description RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58
RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
File Size 132.29K  /  11 Page

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    K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-

Samsung semiconductor
Samsung Electronic
Part No. K4S641632H-TL70 K4S641632H-TC70 K4S641632H-TC75 K4S641632H-TC60 K4S640832H-TC75 K4S641632H-L60 K4S640432H-TC K4S640432H-TC75 K4S640432H-L75 K4S640832H-L75 K4S641632H-L70 K4S641632H-L75 K4S640432H-TL75 K4S640832H-TL75 K4S641632H-TL60 K4S641632H-TL75
OCR Text ...ddress * Four banks operation * mrs cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system cl...
Description 64Mb H-die SDRAM Specification
File Size 142.04K  /  14 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text ...ed address Four banks operation mrs cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system cloc...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
File Size 1,151.85K  /  43 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text ...ed address Four banks operation mrs cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system cloc...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
File Size 100.95K  /  12 Page

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    K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text ...ed address Four banks operation mrs cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system cloc...
Description LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
File Size 99.80K  /  12 Page

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    K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text ...ed address Four banks operation mrs cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system cloc...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY
IR LED 880NM 40 DEG SIDE VIEW
File Size 98.65K  /  12 Page

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For mrs Found Datasheets File :: 2381    Search Time::1.297ms    
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