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NXP Semiconductors N.V.
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| Part No. |
BLF7G27LS-75P BLF7G27L-75P
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| OCR Text |
...rage temperature ? 65 +150 ?c t j junction temperature - 225 ?c
blf7g27l-75p_blf7g27ls-75p all information provided in this document is su...cdma, single carri er is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). p... |
| Description |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.
Power LDMOS transistor BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G27L-75P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
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| File Size |
135.66K /
13 Page |
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NXP Semiconductors N.V.
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| Part No. |
BLM6G10-30 BLM6G10-30G
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| OCR Text |
...rage temperature ? 65 +150 ?c t j junction temperature - 200 ?c table 5. thermal characteristics symbol parameter conditions value unit r th...cdma [1] 7.5 k/w r th(j-c)2 second stage thermal resistance from junction to case t case = 80 ?c;... |
| Description |
W-CDMA 860 MHz to 960 MHz power MMIC BLM6G10-30G<SOT822-1 (HSOP16)|<<http://www.nxp.com/packages/SOT822-1.html<1<,;BLM6G10-30G<SOT822-1 (HSOP16)|<<http://www.nxp.com/packages/SOT822-1.html<1<,;
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| File Size |
495.85K /
15 Page |
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ANADIGICS, Inc.
ANADIGICS INC
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| Part No. |
AWT6136M5P8 AWT6136RM5P8
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| OCR Text |
...e w o p l e n n a h c t n e c a j d a t a t e s f f o z h k 5 8 8 ) 1 ( z h m 3 2 . 1 = w b l e n n a h c y r a m i r p z h k 0 3 = w b l e n n a h c t n e c a j d a - - 0 5 - 8 5 - 7 4 - 7 4 - b d p out v , m b d 5 . 9 2 + = mode v 0 = p ... |
| Description |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
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| File Size |
221.33K /
12 Page |
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it Online |
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Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S9100NR1 MRF5S9100MBR1 MRF5S9100NBR1 MRF5S9100MR1
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| OCR Text |
...perating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, juncti...cdma lateral n - channel rf power mosfets mrf5s9100nr1 mrf5s9100nbr1 mrf5s9100mr1 mrf5s9100mbr1 case... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs N沟道增强型MOSFET的外
CAP 0.1UF 100V 10% X7R AXIAL TR-14
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| File Size |
439.17K /
12 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G27L-90P BLF7G27LS-90P
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| OCR Text |
...rage temperature ? 65 +150 ?c t j junction temperature - 225 ?c
blf7g27l-90p_blf7g27ls-90p all information provided in this document is su...cdma, single carri er is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). p... |
| Description |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
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| File Size |
951.03K /
14 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
100B0R3BW 100B8R2CW
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| OCR Text |
...operating channel temperature t j 200 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (1) unit ther...cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. par = 8.5 db @ 0.01% probabilit... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
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| File Size |
702.41K /
16 Page |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G27LS-40P BLF6G27L-40P
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| OCR Text |
...rage temperature ? 65 +150 ?c t j junction temperature - 225 ?c
blf6g27l-40p_6g27ls-40p all information provided in this document is subje...cdma, single carri er is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 - 13). p... |
| Description |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
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| File Size |
155.61K /
14 Page |
View
it Online |
Download Datasheet |
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