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  isoplus Datasheet PDF File

For isoplus Found Datasheets File :: 250    Search Time::1.282ms    
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    FMM150-0075P

IXYS Corporation
Part No. FMM150-0075P
OCR Text isoplus i4-PACTM ID25 = 150 A = 75 V VDSS RDSon typ. = 4.7 m Preliminary data 3 T1 5 4 1 2 T2 1 5 MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25C TC = 90C (body diode) TC = 25C (body diode) TC = 90C Conditions...
Description Trench Power MOSFET Phaseleg Topology in isoplus i4-PAC

File Size 41.22K  /  2 Page

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    IXYS
Part No. IXFE80N50
OCR Text ...b(01/03) preliminary data sheet isoplus 227 tm (ixfe) s g s d ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 100.23K  /  2 Page

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    IXYS[IXYS Corporation]
Part No. IXFR44N60
OCR Text ...+150 V V V V A A A mJ J V/ns isoplus 247TM E153432 G = Gate S = Source * Patent pending D = Drain Features W C C C C V~ g * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs isoplus247

File Size 33.64K  /  2 Page

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    IXSR40N60CD1

IXYS Corporation
Part No. IXSR40N60CD1
OCR Text ... V V A A A A ms W C C C V~ C isoplus 247TM (IXSR) E 153432 G C E Isolated backside* G = Gate, E = Emitter C = Collector, * Patent pending Features * * * * * DCB Isolated mounting tab Meets TO-247AD package Outline...
Description IGBT with Diode isoplus247

File Size 35.43K  /  2 Page

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    IXFR15N80Q

IXYS Corporation
Part No. IXFR15N80Q
OCR Text ...13 A = 0.60 W trr 250 ns isoplus 247TM Isolated back surface* G = Gate S = Source * Patent pending Features D = Drain * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2...
Description HiPerFET Power MOSFETs isoplus247 Q Class

File Size 31.94K  /  2 Page

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    IXFR26N60Q

IXYS Corporation
Part No. IXFR26N60Q
OCR Text ...A A mJ J V/ns W C C C C V~ g isoplus 247TM E153432 G = Gate S = Source * Patent pending D = Drain 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 Features * Silicon chip on Direct-Copper-Bond subst...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs isoplus247 Q-CLASS

File Size 33.86K  /  2 Page

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    IXFE50N50

IXYS Corporation
Part No. IXFE50N50
OCR Text ...e used as main or kelvin source isoplus 227 tm (ixfe) 98904 (2/02) features ? low cost direct-copper bonded aluminium package ? encapsulating epoxy meets ul 94 v-0, flammability classification ? 2500v isolation ? low drain to ca...
Description (IXFE50N50 / IXFE55N50) HiPerFETTM Power MOSFET

File Size 676.99K  /  2 Page

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    IXFR34N80

IXYS Corporation
Part No. IXFR34N80
OCR Text ...00 5 V V V V A A A mJ J V/ns isoplus 247TM E153432 G D S Isolated backside* G = Gate S = Source D = Drain * Patent pending Features W C C C C V~ g l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power d...
Description Single MOSFET Die Avalanche Rated

File Size 58.47K  /  2 Page

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    IXFE34N100

IXYS Corporation
Part No. IXFE34N100
OCR Text ...n or kelvin source 98897 (1/02) isoplus 227 tm (ixfe) s g s d ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,...
Description (IXFE34N100 / IXFE36N100) HiPerFET-TM Power MOSFET

File Size 449.86K  /  2 Page

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    IXYS[IXYS Corporation]
Part No. L608 FMD80-0045PS
OCR Text isoplus i4-PACTM Preliminary data 3 ID25 = 100 A = 55 V VDSS RDSon (typ.) = 3.8 m 4 1 2 1 5 MOSFET Symbol VDSS VGS ID25 ID90 TC = 25C TC = 90C Conditions TVJ = 25C to 150C Maximum Ratings 55 20 150 110 V V A A Features * t...
Description MOSFET Modules
Chopper with Trench Power MOSFET and Schottky Diode

File Size 40.84K  /  2 Page

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For isoplus Found Datasheets File :: 250    Search Time::1.282ms    
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