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  ism-b Datasheet PDF File

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...atings and Characteristics IS ISM VSD trr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Bo...B Y R D S (o n) 10 s 10 TJ = 15 0C TJ = 2 5C -I D , D rain C urrent (A ) 10 100s ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...atings and Characteristics IS ISM VSD t rr Q rr t on Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Di...B OTTO M ID -2.9A -5.1 A -7.2 A - 20V tp 150 100 15V Fig 12a. Unclamped Inductive ...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...atings and Characteristics IS ISM VSD t rr Q rr t on Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (...B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...atings and Characteristics IS ISM V SD t rr Q rr t on Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current ...B 1.32 (.052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    2N7002LT1 ON0106

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
Part No. 2N7002LT1 ON0106
OCR Text ...300 s, Duty Cycle 2.0%. VSD IS ISM -- -- -- -- -- -- -1.5 -115 - 800 Vdc mAdc mAdc 2 Motorola Small-Signal Transistors, FETs and Diod...B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701...
Description CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system

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    2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1

ONSEMI[ON Semiconductor]
http://
Part No. 2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1
OCR Text ...00 ms, Duty Cycle 2.0%. VSD IS ISM - - - - - - -1.5 -115 -800 Vdc mAdc mAdc (VDD = 25 Vdc, ID ^ 500 mAdc, RG = 25 W, RL = 50 W, Vgen = 10 V...B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0....
Description Small Signal MOSFET 115 mA, 60 Volts
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
Small Signal MOSFET 60 V 115 mA N−Channel SOT−23

File Size 58.74K  /  4 Page

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    BSS145 Q67000-S132

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSS145 Q67000-S132
OCR Text ... diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.4 A, Tj = 25 C Semiconduct...b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 RDS (on) 9 8 7 6 5 4 3 2 b a b c d...
Description SIPMOS Small-Signal Transistor (N channel Enhancement mode)
SIPMOS ? Small-Signal Transistor

File Size 137.62K  /  8 Page

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    BSS149 Q67000-S252

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BSS149 Q67000-S252
OCR Text ... R S T U V W 1): Unit IS ISM - VSD 1.2 VGS(th) Grouping Test Condition - max. 0.15 - 0.80 - 0.93 - 1.06 - 1.19 - 1.32 -...b x V(BR)DSS (25 C) Semiconductor Group 6 ...
Description SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

File Size 278.04K  /  6 Page

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    DMN100 DMN100-7 DMN100-13

DIODES[Diodes Incorporated]
Part No. DMN100 DMN100-7 DMN100-13
OCR Text ...Qgs Qgd tD(ON) tD(OFF) tr tf IS ISM VSD trr Min 30 3/4 3/4 1.0 3/4 1.3 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 2.4 150 90 30 5.5 0.8 1.3 10 25 15 45 3/4 3/4 3/4 35 Max 3/4 1.0 10 100 3.0 0.170 0.240 ...
Description 1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 62.71K  /  3 Page

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    SPA20N60C2 SPB20N60C2 SPP20N60C2

INFINEON[Infineon Technologies AG]
Part No. SPA20N60C2 SPB20N60C2 SPP20N60C2
OCR Text ... 20 40 1.2 1040 - Unit IS ISM TC=25C - A V ns C A A/s Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.007416 0.016 0.021 0.06 0.083 0.038 Value SPA 0.077 0.015 0.022 0.063 0.214 2....
Description for lowest Conduction Losses & fastest Switching
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor

File Size 161.92K  /  14 Page

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