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				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	...at 4 GHz * Low Bias: VDS = 2 V, ids = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1 dB at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and Reel Packaging Option Available [1] ...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	...at 4 GHz * Low Bias: VDS = 2 V, ids = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1dB at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-And-Reel Packaging Option Available [1] D...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	...at 4 GHz * Low Bias: VDS = 2 V, ids = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available [1] Desc...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...imum Noise Figure: VDS = 2.5 V, ids = 20 mA f = 8.0 GHz f = 12.0 GHz f = 15.0 GHz f = 8.0 GHz f = 12.0 GHz f = 15.0 GHz Units dB dB dB dB dB dB Min. Typ. Max. 0.8 1.1 1.5 12.0 9.5 8.0 17.5 8.5 30 40 -3.0 55 50 -1.5 90 -0.8 1.2 GA Gain...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	...imum Noise Figure: VDS = 2.5 V, ids = 20 mA f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz Units dB dB dB dB dB Min. Typ. Max. 1.2 1.4 1.6 11.5 9.0 7.5 17.5 8.5 25 40 -4.0 55 50 -1.5 90 -0.5 1.6 GA Gain @ ...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	...imum Noise Figure: VDS = 2.5 V, ids = 20 mA f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f =12.0 GHz f = 12.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 25 40 -4.0 Min. Typ. Max. 1.5 1.8 2.1 11.5 9.0 7.0 17....
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Agilent (Hewlett-Packard) ETC[ETC] HP[Agilent(Hewlett-Packard)] List of Unclassifed Manufacturers
Part No.	ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text	... Gain vs. Frequency. VDS = 3 V, ids = 40 mA. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable ...
Description	Surface Mount Gallium Arsenide FET for Oscillators
File Size	43.73K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21170
OCR Text	...ptimum Noise Figure: VDS = 3 V, ids = 20 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 70 80 -3.0 Min. Typ. Max. 0.6 0.9 1.2 16.0 13.0 10.0 23.0 1...
Description	0.5-6 GHz Low Noise Gallium Arsenide FET
File Size	41.90K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	... Gain vs. Frequency. VDS = 2 V, ids = 15 mA. 5-49 5965-8716E ATF-21186 Absolute Maximum Ratings Symbol VDS VGS VGD ids PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipati...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-25170
OCR Text	...ptimum Noise Figure: VDS = 3 V, ids = 20 mA f = 4.0 GHz f = 6 0 GHz f = 8.0 GHz f = 4.0 GHz f = 6.0 GHz f = 8.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 50 50 -3.0 Min. Typ. Max. 0.8 1.0 1.2 14.0 11.5 9.0 21.0 15...
Description	0.5-10 GHz Low Noise Gallium Arsenide FET
File Size	40.04K / 3 Page	View it Online	Download Datasheet

For ids Found Datasheets File :: 5331 Search Time::1.266ms
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