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IRF[International Rectifier]
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Part No. |
IRGBC40S
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OCR Text |
...
V G E = 15 V 20 s P UL S E W ID TH
10
1 5 10
V C C = 1 00 V 5 s P UL S E W IDTH
15 20
V C E , C o llector-to-Em itter V oltag...31A I C = 1 6A
1 4 .0
10
1 3 .8
1 3 .6
1 3 .4
1 3 .2 0 10 20 30 40 50 60
1 -60 ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=31A)
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File Size |
212.62K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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Part No. |
FDB6670S FDP6670S FDB6670SNL
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OCR Text |
...imum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A =25 oC...31A VGS = 10V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4
ID = 15.5A 0.022
0.017
1... |
Description |
30V N-Channel PowerTrench SyncFET TM 30V N-Channel PowerTrench SyncFET TM 30V N-Channel PowerTrench? SyncFET 30V N-Channel PowerTrenchÒ SyncFET™ From old datasheet system 30V N-Channel PowerTrench SyncFET 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
86.56K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRLI2203 IRLI2203G
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OCR Text |
....
VDSS = 30V RDS(on) = 0.010 ID = 52A
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR E...31A 0.015 VGS = 5.0V, ID = 26A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 55A 25 VDS = 30V, V... |
Description |
Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A) Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A? Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?? Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A?) TERMINAL
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File Size |
286.77K /
8 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQB34N20L FQI34N20L FQB34N20LTMSB82076 FQB34N20LTMAM002 FQB34N20LTM
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OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Cont...31A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 34A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25... |
Description |
200V LOGIC N-Channel MOSFET 31 A, 200 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 200V N-Channel Logic Level QFET
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File Size |
660.39K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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