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  id-1.8a Datasheet PDF File

For id-1.8a Found Datasheets File :: 937    Search Time::1.062ms    
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    TP0610T

Supertex, Inc.
Supertex Inc
SUTEX[Supertex, Inc]
Part No. TP0610T
OCR Text ID(ON) (min) -50mA Order Number/Package TO-236AB* TP0610T Product marking for SOT-23: T50 where = 2-week alpha date code *Same as SOT-23...18A RGEN = 25 VGS = 0V, ISD = -0.12A VGS = 0V, ISD = -0.4A D.U.T. OUTPUT RL VDD TP0610T ...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

File Size 447.82K  /  4 Page

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    APT6035BVR

ADPOW[Advanced Power Technology]
Part No. APT6035BVR
OCR Text ... MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...18A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description POWER MOS V 600V 18A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.29K  /  4 Page

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    APT6035SVR APT10088HVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT6035SVR APT10088HVR
OCR Text ... MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...18A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm

File Size 65.18K  /  4 Page

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    GA200TD120U

IRF[International Rectifier]
Part No. GA200TD120U
OCR Text ... trr Ic Q rr = trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V p...18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec,...
Description HALF-BRIDGE IGBT DOUBLE INT-A-PAK

File Size 295.85K  /  10 Page

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    GA400TD60U

IRF[International Rectifier]
Part No. GA400TD60U
OCR Text ... ted vo ltag e 100 I 50 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency ...18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr...
Description 600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT

File Size 235.92K  /  10 Page

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    NTE2931

NTE Electronics
Part No. NTE2931
OCR Text .... . . . . . 200V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...18A, di/dt 260A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unl...
Description 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.33K  /  3 Page

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    NTE2944

NTE Electronics
Part No. NTE2944
OCR Text ... . . . . . . 20V Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...18A, VGS = 0V, Note 4 TJ = +25C, IF = 18A, dIF/dt = 100A/s VGS = 10V, ID = 18A, VDS = 0.8 Max. Ratin...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 25.20K  /  3 Page

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    NTE2976

NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE2976
OCR Text ... . . . . . . 30V Drain Current, ID Continuous DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....18A Continuous DC Source Current, IS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description Dual Channel, 1/1, 25Mbps Digital Isolator 8-SOIC -40 to 125
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.46K  /  2 Page

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    NTE2985

NTE Electronics
Part No. NTE2985
OCR Text ...Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....18A, Note 4 VGS = 4V, ID = 15A, Note 4 VDS = VGS, ID = 250A VDS 25V, ID = 18A, Note 4 VDS = 60V, VG...
Description Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 26.51K  /  3 Page

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    IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF IRFR5505TRL IRFR5505TRR IRFU5505PBF

IRF[International Rectifier]
http://
Part No. IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF IRFR5505TRL IRFR5505TRR IRFU5505PBF
OCR Text ...= -55V RDS(on) = 0.11 G S ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ...
Description P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
HEXFET? Power MOSFET

File Size 104.10K  /  10 Page

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For id-1.8a Found Datasheets File :: 937    Search Time::1.062ms    
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