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IRF[International Rectifier]
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| Part No. |
IRHNA8064 IRHNA7064
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| OCR Text |
...DSS 60V 60V RDS(on) 0.015 0.015 ID 75A* 75A*
Features:
s s s s s s s s s s s s s
Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Harden... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
81.43K /
4 Page |
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International Rectifier SEME-LAB[Seme LAB] TT electronics Semelab, Ltd. SEMELAB LTD
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| Part No. |
IRFN9140SMD IRFN9140SMDR4
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| OCR Text |
....7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
-100V -14A W 0.020W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
* HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRIN... |
| Description |
P-CHANNEL POWER MOSFET 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, SMD1, 3 PIN ER 06 20 P/C 14 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
23.32K /
2 Page |
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IRF
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| Part No. |
IRHNA63260 IRHNA67260
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| OCR Text |
...K Rads (Si) RDS(on) 0.028 0.028 ID 56A 56A
IRHNA67260 200V, N-CHANNEL
TECHNOLOGY
International Rectifier's R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event E... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
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| File Size |
137.66K /
8 Page |
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it Online |
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