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Part No. |
IXFR26N120P
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OCR Text |
...citance(<30pf) ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? fast intrinsic rectifier advantages ? easy assembly ? space savings ? high power density isolated tab i... |
Description |
Polar Power MOSFET HiPerFET
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File Size |
106.97K /
4 Page |
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IXYS, Corp.
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Part No. |
IXFD76N07-7X
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OCR Text |
...lass of power mosfet uses ixys' hdmos process, which improves the ruggedness of the mosfet while reducing the reverse recovery time of the f...tm power mosfet this table reflects only new designed chips. please contact factory for older desig... |
Description |
70 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET 0.348 X 0.283 INCH, DIE
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File Size |
50.72K /
3 Page |
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it Online |
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IXYS, Corp.
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Part No. |
VMO80-05P1
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OCR Text |
...itance(< 25 pf) ? low r ds(on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? fast intrinsic rectifier ? ul certified, e 148688 applications ? dc-dc converters ? battery chargers ? ... |
Description |
82 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET ECO-PAC-2, DIE-18
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File Size |
64.02K /
2 Page |
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it Online |
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