ep-7 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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ep-7 Datasheet PDF File

For ep-7 Found Datasheets File :: 6313 Search Time::1.422ms
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				International Rectifier
Part No.	IRG7PH35UD-EP IRG7PH35UDPBF IRG7PH35UDPBF-15
OCR Text	...ree IRG7PH35UDPbF IRG7PH35UD-EP C VCES = 1200V I NOMINAL = 20A G E TJ(max) = 150C Benefits * High efficiency in a wide rang...7 - Typ. IGBT Output Characteristics TJ = 25C; tp = 30s 80 70 60 50 40 30 20 10 0 -40C 25C 150C ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 50 A, 1200 V, N-CHANNEL IGBT, TO-247AD
File Size	461.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH35UD1-EP IRG7PH35UD1PBF
OCR Text	...S IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features * * * * * * * * * Low VCE (ON) trench IGBT Technology Low Swit...7 10 0.6 0.5 25 50 75 100 125 150 T J , Temperature (C) IC (A) 1 10 100 VCE (V) 1000 10000 ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
File Size	400.08K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH46U-EP IRG7PH46UPBF
OCR Text	...ee C IRG7PH46UPbF IRG7PH46U-EP VCES = 1200V IC = 75A, TC = 100C G E TJ(max) =175C n-channel VCE(on) typ. = 1.7V Benefits ...7 2.0 2.1 -- -15 60 1 1170 -- Max. Units -- -- 2.0 -- -- 6.0 -- -- 100 -- 200 V V Conditions ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	382.29K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH42U-EP IRG7PH42UPBF
OCR Text	...ee C IRG7PH42UPbF IRG7PH42U-EP VCES = 1200V IC = 60A, TC = 100C G E TJ(max) =175C n-channel VCE(on) typ. = 1.7V Benefits ...7 2.1 2.2 -- -16 32 1 700 -- Max. Units -- -- 2.0 -- -- 6.0 -- -- 150 -- 100 V V Conditions ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	396.79K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG7PH42UD1-EP IRG7PH42UD1PBF
OCR Text	...S IRG7PH42UD1PbF IRG7PH42UD1-EP VCES = 1200V I NOMINAL = 30A Features * * * * * * * * * Low VCE (ON) trench IGBT technology Low swit...7 2.0 -- 32 1.0 230 1.15 1.10 -- Max. Units -- 1300 -- 2.0 -- 6.0 -- 100 -- 1.30 -- 100 Condi...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
File Size	417.31K / 9 Page	View it Online	Download Datasheet

For ep-7 Found Datasheets File :: 6313 Search Time::1.422ms
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