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For dson Found Datasheets File :: 1985 Search Time::1.375ms
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				Philips Semiconductors
Part No.	BUK9907-40ATC
OCR Text	...junction temperature - 175 c r dson drain-source on-state resistance t j =25 c; v gs =5v; i d =50a 5.8 7 m w t j =25 c; v gs = 4.5 v; i d =50a 6 7.7 m w t j =25 c; v gs = 10 v; i d = 50 a 5.2 6.2 m w v f temperature sense diode forward ...
Description	Trenchplus Logic Level Fet
File Size	184.76K / 15 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	ST1S12XX10 ST1S12XX12 ST1S12XX18
OCR Text	...00 a over temperature range r dson typ. 250 m and 400 m uses tiny capacitors and inductors operative junction temp. -40c to 125c available in tsot23-5l package description the st1s12gxx is a step down dc-dc converter optimized for...
Description	Synchronous rectification with enable, 0.7 A, 1.7 MHz fixed or adjustable step-down switching regulator in TSOT23-5L Synchronous rectification with enable, 0.7 A, 1.7 MHz fixed or adjustable step-down switching regulator in TSOT23-5L
File Size	287.37K / 20 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd.
Part No.	APTC60DDAM70T3
OCR Text	...te - source voltage 20 v r dson drain - source on resistance 70 m ? p d maximum power dissipation t c = 25c 250 w i ar avalanche current (repetitive and non repetitive) 20 a e ar repetitive avalanche energy ...
Description	Dual boost chopper Super Junction MOSFET Power Module 双升压斩波器超结MOSFET的功率模
File Size	335.01K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7Y65-100E
OCR Text	...- 64 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 25 c; fig. 11 - 44 65 m dynamic characteristics q gd gate-drain charge v gs = 10 v; i d = 5 a; v ds = 80 v; t j = 25 c; fig. 13 ; ...
Description	N-channel 100 V, 65 mΩ standard level MOSFET in LFPAK56
File Size	313.74K / 13 Page	View it Online	Download Datasheet

				Microchip Technology
Part No.	TC1304
OCR Text	... ss ?0.5? mst r = 10% to 90% r dson p-channel r dson-p ? 450 650 m i p =100 ma r dson n-channel r dson-n ? 450 650 m i n =100 ma l x pin leakage current i lx -1.0 0.01 1.0 a shdn = 0v, v in = 5.5v, l x = 0v, l x = 5.5v positive ...
Description	(TC1303 / TC1304) 500 mA Synchronous Buck Regulator
File Size	522.02K / 36 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7Y29-40E
OCR Text	...- 37 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 5 a; t j = 25 c; fig. 11 - 22.7 29 m dynamic characteristics q gd gate-drain charge v gs = 10 v; i d = 5 a; v ds = 32 v; t j = 25 c; fig. 13 ;...
Description	N-channel 40 V, 29 mΩ standard level MOSFET in LFPAK56
File Size	344.72K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7Y25-80E
OCR Text	...- 95 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 10 a; t j = 25 c; fig. 11 - 16.7 25 m dynamic characteristics q gd gate-drain charge v gs = 10 v; i d = 10 a; v ds = 64 v; t j = 25 c; fig. 13 ...
Description	N-channel 80 V, 25 mΩ standard level MOSFET in LFPAK56
File Size	339.04K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BUK7Y25-60E
OCR Text	...- 64 w static characteristics r dson drain-source on-state resistance v gs = 10 v; i d = 10 a; t j = 25 c; fig. 11 - 15.7 25 m dynamic characteristics q gd gate-drain charge i d = 10 a; v ds = 48 v; v gs = 10 v; t j = 25 c; fig. 13 ...
Description	N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56
File Size	344.11K / 13 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTC60DSKM45T1G
OCR Text	...te - source voltage 20 v r dson drain - source on resistance 45 m p d maximum power dissipation t c = 25c 250 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 ...
Description	Dual Buck chopper Super Junction MOSFET Power Module
File Size	252.18K / 7 Page	View it Online	Download Datasheet

				Microsemi, Corp.
Part No.	APTM50TDUM65PG
OCR Text	...te - source voltage 30 v r dson drain - source on resistance 78 m ? p d maximum power dissipation t c = 25c 390 w i ar avalanche current (repetitive and non repetitive) 51 a e ar repetitive avalanche energy ...
Description	Triple dual common source MOSFET Power Module 51 A, 500 V, 0.078 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
File Size	289.11K / 6 Page	View it Online	Download Datasheet

For dson Found Datasheets File :: 1985 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |