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diode-30v Datasheet PDF File

For diode-30v Found Datasheets File :: 19150 Search Time::1.578ms
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				Alpha & Omega Semiconductors
Part No.	AON6500
OCR Text	... ns t r 12.8 ns t 68.5 ns i dss diode forward voltage dynamic parameters v gs =4.5v, i d =20a v gs =10v, i d =20a gate-body leakage current v ds =0v, v gs = 20v i s =1a,v gs =0v maximum body-diode continuous current m a drain-source breakdo...
Description	30V N-Channel AlphaMOS
File Size	276.50K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON2410
OCR Text	...s t r 3 ns t 26 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds ...
Description	30V N-Channel MOSFET
File Size	223.87K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON2407
OCR Text	... total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge zero gate voltage drain cu...
Description	30V P-Channel MOSFET
File Size	257.33K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics N.V.
Part No.	STD10PF06T4
OCR Text	...actor 0.27 w/ c dv/dt (1) peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 c t j max. operating junction temp...30v i d =5a r g = 4.7 w v gs =10v (resistive load, figure 3) 20 40 ns ns q g q gs q gd total gate c...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 10A I(D) \| TO-252AA 晶体管\| MOSFET的\| P通道\| 60V的五（巴西）直\| 10A条（丁）\|52AA
File Size	93.65K / 9 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSF7401
OCR Text	...10v, r g =3 ? source-drain diode diode forward voltage 2 v sd - - -1 v i s = -1a,v gs =0 reverse recovery time 2 t rr - 13.2 - ...30v , -2a p-ch enhancement mode mosfet 18-oct-2011 rev. b page 3 of 4 http://www.secosgmbh.co...
Description	-30V , -2A P-Ch Enhancement Mode MOSFET
File Size	357.60K / 4 Page	View it Online	Download Datasheet

				http:// IRF[International Rectifier]
Part No.	IRHSNA53064 IRHSNA58064 IRHSNA54064 IRHSNA57064
OCR Text	...RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 75A Output Low Conduction Los...30V VDD = 30V, ID = 45A, VGS =12V, RG = 2.35 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD ...
Description	From old datasheet system RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) 60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package
File Size	111.44K / 9 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSF7400
OCR Text	...3 - ? f=1.0mhz source-drain diode continuous source current ( bod y diode ) i s - - 0.5 a v g =v d =0, v s =1v diode forward vo...30v , 1.7a , r ds(on) 85m ? n-ch enhancement mode power mosfet 25-aug-2011 rev. b page 3 of 4...
Description	30V , 1.7A , RDS(ON) 85mΩ N-Ch Enhancement Mode Power MOSFET
File Size	426.39K / 4 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SD203N/R25S20 SD203N/R04S10 SD203N/R08S10 SD203N/R10S10 SD203N/R12S15 SD203N/R14S15 SD203N/R16S15 SD203N/R20S20 SD203NR
OCR Text	...ures ? high power fast recovery diode series ? 1.0 to 2.0 s recovery time ? high voltage ratings up to 2500 v ? high current capability ? op...30v j r 10 20 30 40 50 60 70 80 90 100 110 120 130 140 0 20406080100 maximum reverse recovery charge...
Description	Fast Recovery Diodes (Stud Version), 200 A
File Size	255.16K / 10 Page	View it Online	Download Datasheet

				OPTEK[OPTEK Technologies] ETC Optek Technology
Part No.	AOP604
OCR Text	...ude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. Features n-channel p-channel VDS (V) = 30V -30V ID = 7.5A -6.6A RDS(ON) < 28m < 35m (VGS = 10V) < 43m < 58m (VGS = 4.5V) Schottk...
Description	LJT 12C 8#20 4#16 SKT WALL REC Complementary Enhancement Mode Field Effect Transistor
File Size	532.90K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSF077N06NT3G
OCR Text	...0 v, v gs =0 v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode continuous fo...30v, i f = i s , d i f /d t =400 a/s reverse recovery time t rr -41- ns optimos? power-mosfet bs...
Description	n-Channel Power MOSFET
File Size	1,390.98K / 13 Page	View it Online	Download Datasheet

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