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  die cell Datasheet PDF File

For die cell Found Datasheets File :: 3088    Search Time::1.188ms    
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    IBM Microeletronics
Part No. IBMN312164CT3 IBMN312804CT3
OCR Text die revision b 06k7582.h03335a 10/00 ?ibm corporation. all rights reserved. use is further subject to the provisions at the end of this docu...cell array row decoder address buffers (14) column decoder sense ampli?ers memory bank 3 cell array ...
Description 128Mb(8Mbit x 4 I/O x 4 Bank) Synchronous DRAM(128M8Mx 4 I/O x 4 同步动态RAM)
128Mb(4Mbit x 8 I/O x 4 Bank) Synchronous DRAM(128M4Mx 8 I/O x 4 同步动态RAM)

File Size 666.74K  /  66 Page

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    IBM Microeletronics
Part No. IBM0312804
OCR Text die revision a 33l8019.f45415 7/99 ?ibm corporation. all rights reserved. use is further subject to the provisions at the end of this docume...cell array row decoder address buffers (14) column decoder sense ampli?ers memory bank 3 cell array ...
Description 128MbMbit x 8 I/O x 4 BankSynchronous DRAM(128M位(4Mx 8 I/O x 4 组)同步动态RAM)

File Size 701.99K  /  70 Page

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    K5N1229ACD-BQ12

Samsung semiconductor
Part No. K5N1229ACD-BQ12
OCR Text ... - 512M Bit SLC Mux NOR Flash C-die_Ver 1.0 - 128M Bit Mux UtRAM2 C-die_Ver 1.0 <Common> - Finalized. 1.0 Jun. 22, 2010 Final H....cell. The device supports the traditional SRAM like asynchronous operation (asynchronous read and as...
Description 512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash

File Size 1,163.11K  /  128 Page

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    INFINEON[Infineon Technologies AG]
Part No. Q62705-K432 KP110
OCR Text ...gnal Conditioning Low Cost Bare die Version Data Sheet 357 Features * Ratiometric analog output * Programmable transfer function performed ...cell consists of a thin polysilicon wire located in a small evacuated cavity. The cells are called H...
Description BiCMOS Advanced Phase Shift Resonant Controller 20-TSSOP -40 to 85
Absolute Pressure Sensor IC Programmable Temperature Compensation and Calibration On-Chip Signal Conditioning Low Cost Bare die Version

File Size 70.34K  /  12 Page

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    RF Micro Devices, Inc.
RFMD[RF Micro Devices]
Part No. RF2643 RFMICRODEVICESINC-RF2643
OCR Text ...ss chip carrier with an exposed die flag. 1.00 0.90 0.60 0.24 typ 4.00 sq. 0.65 0.30 4 PLCS 3 0.20 2.10 sq. 6 MIXERS ...cell MIXOUT Si BJT GaAs HBT SiGe HBT cell GND cell VCC GaAs MESFET Si CMOS cell IN Fea...
Description 3V DUAL-BAND UPCONVERTER AND DRIVER AMPLIFIER

File Size 373.98K  /  16 Page

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    ISL9222A ISL9222AIRTZ-T

Intersil Corporation
Part No. ISL9222A ISL9222AIRTZ-T
OCR Text ...aterial sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant a...cell voltage rises to 4.2V. When the battery voltage reaches 4.2V, the charger enters a CV mode and ...
Description High Input Voltage Charger Low Component Count and Cost

File Size 114.81K  /  8 Page

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    Cymbet Corporation
Part No. CBC005-BDC-WP CBC005-BUC-WP
OCR Text ...% discharge physical properties die size (mm): 1.7 x 2.25 x 0.175 operating temperature: -20c to 70c storage temperature: -40c to 12...cell batteries and super-capacitors in handheld devices. board mounting area of the cbc005 is less ...
Description Rechargeable Energy Storage Device: 5Ah, 3.8V

File Size 248.91K  /  3 Page

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    CY14B104L-BA15XI CY14B104L-BA15XIT CY14B104L-BA25XI CY14B104L-BA25XIT CY14B104N-BA15XI CY14B104N-BA15XCT CY14B104N-BA15X

Cypress Semiconductor
http://
Part No. CY14B104L-BA15XI CY14B104L-BA15XIT CY14B104L-BA25XI CY14B104L-BA25XIT CY14B104N-BA15XI CY14B104N-BA15XCT CY14B104N-BA15XIT CY14B104N-ZS25XCT
OCR Text ...8 Mbit. NC pin not connected to die. 3. Address expansion for 16 Mbit. NC pin not connected to die. Document #: 001-07102 Rev. *F Page...cell. They are an SRAM memory cell and a nonvolatile QuantumTrap cell. The SRAM memory cell operates...
Description 4-Mbit (512K x 8/256K x 16) nvSRAM

File Size 549.73K  /  22 Page

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    TGF2023-02

TriQuint Semiconductor
Part No. TGF2023-02
OCR Text ...s: millimeters Thickness: 0.100 die x,y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad #1, #2 Bond Pad #3 Vg Vd 0.154 x 0.115 0.154 x 0.490 GaAs MMIC devi...
Description 12 Watt Discrete Power GaN on SiC HEMT

File Size 217.58K  /  7 Page

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