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Toshiba, Corp.
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| Part No. |
MT3S111TU
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| OCR Text |
...hz, S f=1 mhz ? 3 2 ? dbmw electrical characteristics (ta = 25c) characteristics symbol test condition min typ . max unit collector c ut - off c urrent i cbo v c b = 5 v, i e =0 a ? ? 0.1 ... |
| Description |
Radio-frequency SiGe Heterojunction Bipolar Transistor
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| File Size |
273.92K /
5 Page |
 View
it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TA4018F
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| OCR Text |
...-10
Pout, IM3, IM2 - Pin
(dbmw)
-20 -30 -40
Po VGCA = 3.0 V
0
(dB)
Pout, IM3, IM2
-10 -20 -30 VCC = 5 V -40 -50 0.0 f = 44 MHz Ta = 25C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IM3 -50 -60 -70 -80 -90 -100 -50 -45 ... |
| Description |
Bipolar Linear Integrated Circuit Silicon Monolithic VHF Gain Control Amplifier Application
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
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| File Size |
130.50K /
8 Page |
View
it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
MT3S111P
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| OCR Text |
...f=500 mhz, S f=1 mhz ? 32 ? dbmw electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb =5 v, i e =0 a ? ? 0.1 a dc current gain h fe v ce =5 v,... |
| Description |
Radio-frequency SiGe Heterojunction Bipolar Transistor
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| File Size |
172.13K /
5 Page |
View
it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
MT3S111
|
| OCR Text |
... f=500 mhz, S f=1 mhz ? 32 ? dbmw electrical character istics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb =5 v, i e =0 a ? ? 0.1 a dc current gain h fe v ce =5 v... |
| Description |
Radio-frequency SiGe Heterojunction Bipolar Transistor
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| File Size |
169.47K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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