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adoption of fbet process low Datasheet PDF File

For adoption of fbet process low Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				International Rectifier
Part No.	IRF3205LTRR IRF3205S IRF3205STRR
Description	75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Advanced process Technology Advanced process Technology
File Size	612.72K / 11 Page	View it Online	Download Datasheet

				AD[Analog Devices] Analog Devices, Inc.
Part No.	3B32-CUSTOM 3B32 3B32-00 3B32-01 3B32-02 3B32-15
Description	Isolated, process Current Input Isolated/ process Current Input 60V 1A SCHOTTKY RECTIFIER SMB
File Size	346.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7101PBF IRF7101TRPBF IRF7101PBF-15
Description	ADVANCED process TECHNOLOGY HEXFET? Power MOSFET HEXFET㈢ Power MOSFET Adavanced process Technology
File Size	273.34K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	RN4601
Description	Transistor PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
File Size	149.22K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	HN1B04FU HN1B04FUGR
Description	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 50V V(BR)CEO \| 150MA I(C) \| TSOP Transistor Silicon NPN Epitaxial Type (PCT process) Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
File Size	217.78K / 6 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	HN1B01FU HN1B01FUGR
Description	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 50V V(BR)CEO \| 150MA I(C) \| TSOP Transistor Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
File Size	212.83K / 6 Page	View it Online	Download Datasheet

				Bourns, Inc. BOURNS INC
Part No.	8230-90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-58-RC 8230-48-RC 8230-50-RC 8230-54-RC 8230-30-RC 8230-14-RC 8230-40-RC 8230-24-RC 8230-36-RC 8230-32-RC
Description	Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:690MHz; Core Material:Phenolic; Leaded process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded process Compatible:Yes Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded process Compatible:Yes Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:90MHz; Core Material:Iron; Leaded process Compatible:Yes
File Size	187.61K / 2 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	RN4911
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process)
File Size	165.75K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	RN4905
Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Silicon NPN Epitaxial Type (PCT process)
File Size	150.10K / 5 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	3DFO 2DFO 1DFO 3DF0D27 2DF0D27 1DF0D27 3DF0T82 2DF0T82 1DF0T82 1DF0D10 1DF0D12 1DF0D15 1DF0D18 1DF0D22 1DF0D23 1DF0D24 1DF0D25 1DF0D33 1DF0D39 1DF0D47 1DF0D56 1DF0D68 1DF0Q10 1DF0Q12 1DF0Q15 1DF0Q18 1DF0Q22 1DF0Q27 1DF0Q33 1DF0Q39 1DF0Q47 1DF0Q56 1DF0Q68 1DF0Q82 1DF0T10 1DF0T12 1DF0T15 1DF0T18 1DF0T22 1DF0T27 1DF0T33 1DF0T39 1DF0T47 1DF0T56 1DF0T68 2DF0D10 2DF0D12 2DF0D15 2DF0D18 2DF0D22 2DF0D23 2DF0D24 2DF0D25 2DF0D33 2DF0D39 2DF0D47 2DF0D56 2DF0D68 2DF0T18 2DF0T22 2DF0T27 2DF0T33 2DF0T39 2DF0T47 2DF0T56 2DF0T68 3DF0D10 3DF0D12 3DF0D15 3DF0D18 3DF0D22 3DF0D23 3DF0D24 3DF0D25 3DF0D33 3DF0D39 3DF0D47 3DF0Q10 3DF0Q12 3DF0Q15 3DF0Q18 3DF0Q22 3DF0Q27 3DF0Q33 3DF0Q39 3DF0Q47 3DF0Q56 3DF0Q68 3DF0Q82 3DF0T10 3DF0T12 3DF0T15 3DF0T18 3DF0T22 3DF0T27 3DF0T33 3DF0T39 3DF0T47 3DF0T56 3DF0T68
Description	128 x 128 pixel format, LED or EL Backlight available 低电容损耗角正切光盘 low Dissipation Factor Disc Capacitors 低电容损耗角正切光盘 CAP 47UF 4V 16V TANT SMD-6032-15 TR-7 Pushbutton Switch; Leaded process Compatible:Yes RoHS Compliant: Yes Telephone equipment, Telephones; Leaded process Compatible:No; Peak Reflow Compatible (260 C):No From old datasheet system
File Size	119.30K / 2 Page	View it Online	Download Datasheet

For adoption of fbet process low Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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