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For access edge Found Datasheets File :: 19863    Search Time::1.407ms    
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    SED1335-1

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. SED1335-1
OCR Text ...ta setup time Data hold time RD access time Output disable time VDD = 4.5 to 5.5V VDD = 2.7 to 4.5V min max min max 10 -- 10 -- 0 -- 0 -- Se...edge of VCE Address hold time from 2tC - 30 -- falling edge of VCE Read cycle setup time tC - 45 -- ...
Description CMOS GRAPHIC LCD CONTROLLER

File Size 67.52K  /  14 Page

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    Mosel Vitelic
Part No. V54C365164VL
OCR Text ...3 ) 4.5 ns 5 ns 6 ns 7 ns clock access time (t ac3 )cas latency = 3 4.5 ns 5 ns 5.4 ns 5.4 ns clock access time (t ac2 )cas latency = 2 4.5 ...edge single pulsed ras interface data mask for byte control four banks controlled by ba0 & ba1...
Description HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16

File Size 706.89K  /  56 Page

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    NANYA TECHNOLOGY CORP
Part No. NT5DS128M4BT-6K
OCR Text ...precharge option for each burst access ? auto refresh and self refresh modes ?7.8 s maximum average periodic refresh interval ? 2.5v (sstl_...edge- aligned with data for reads and center-aligned with data for writes. the 512mb ddr sdram oper...
Description 128M X 4 DDR DRAM, 0.7 ns, PDSO66

File Size 2,500.58K  /  80 Page

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    DALLAS[Dallas Semiconductor]
Part No. DS1254YB2-100 DS1254 DS1254WB-150 DS1254WB2-150 DS1254YB-100
OCR Text ...ata-output drivers within tACC (access time) after the last address input is stable, providing that CE and OE access times and states are al...edge of CE or WE will determine the start of the write cycle. The write cycle is terminated by the e...
Description 2M x 8 NV SRAM with Phantom Clock

File Size 339.84K  /  17 Page

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    HMN1288J-70I HMN1288J HMN1288J-55 HMN1288J-55I HMN1288J-70

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. HMN1288J-70I HMN1288J HMN1288J-55 HMN1288J-55I HMN1288J-70
OCR Text ...ted with EEPROM. FEATURES w access time : 55, 70 ns w High-density design : 4Mbit Design w Battery internally isolated until power is ap...edge of /CE or /WE will determine the start of the write cycle. The write cycle is terminated by the...
Description Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit),34Pin-JLCC, 5V 非易失性SRAM模块Mbit28K的8位)4Pin - JLCCV
TRI N PLUG M 0-48 NO SEAL

File Size 158.61K  /  8 Page

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    Micron Technology, Inc.
Part No. MT16LSDT464A
OCR Text ...? internal banks for hiding row access/precharge ? programmable burst lengths: 1, 2, 4, 8 or full page ? auto precharge and auto refresh mod...edge of the clock signals ck0-ck3). read and write accesses to the sdram module are burst oriented; ...
Description 4 Meg x 64 SDRAM DIMMs(4M x 64????ㄦ?RAM,????存?瀛???ㄦā??

File Size 261.57K  /  19 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS42SM32400E-75EBLI
OCR Text ...ge internal bank for hiding row access and pre - ? charge programmable cas latency: 2, 3 ? programmable burst length: 1, 2, 4, 8, and full...edge of the clock input. both write and read accesses to the sdram are burst oriented. the 128mb m...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 764.69K  /  26 Page

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Part No. HYM71V16735AT8-K
OCR Text ...ency=3 7.5ns 7.5 75h 75h byte10 access time from clock @/cas latency=3 5.4ns 5.4 54h 54h byte11 dimm configuration type ecc 02h byte12 refre...edge rate, from 0.8v to 2.0v if tr > 1ns, then (tr/2-0. 5)ns should be added to the parameter par...
Description x72 SDRAM Module

File Size 211.45K  /  14 Page

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For access edge Found Datasheets File :: 19863    Search Time::1.407ms    
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