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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC80AM75SCG
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| OCR Text |
...
Test Conditions VR=200v IF = 60a IF = 120A IF = 60a IF = 60a VR = 133V di/dt = 400A/s Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 350 600
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 24 48 6... |
| Description |
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
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| File Size |
297.18K /
7 Page |
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it Online |
Download Datasheet
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100A13SG
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| OCR Text |
...Forward Voltage
VR=200v IF = 60a IF = 120A IF = 60a IF = 60a VR = 133V di/dt = 400A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 24 48 66 300
1.15 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge... |
| Description |
Phase leg Series & parallel diodes MOSFET Power Module 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Series & parallel diodes MOSFET Power Module
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| File Size |
269.72K /
6 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IGW25T120
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| OCR Text |
...TrenchStop Series
tp=3s
70A 60a 50A 40A 30A 20A 10A 0A 10Hz TC=110C TC=80C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10s 10A ...200v
200v
20A
0V
IC
0us 0.5us 1us 1.5us
0A
0A 0us
VCE
0.5us 1us 1.5us
0V
... |
| Description |
Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 25A 1200v TO247 IGBT
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| File Size |
408.38K /
12 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4521 IGW60T120
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| OCR Text |
...infineon.com/igbt/ VCE 1200v IC 60a VCE(sat),Tj=25C 1.9V Tj,max 150C Package TO-247AC
C
P-TO-247-3-1 (TO-247AC)
Type IGW60T120
Ord...200v
30A
30A
200v
0V
IC
0us 0.5us 1us 1.5us
VCE
0A
0A 0us
0V 0.5us 1us 1.5... |
| Description |
IGBTs & DuoPacks - 60a 1200v TO247 IGBT
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
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| File Size |
404.35K /
12 Page |
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it Online |
Download Datasheet |
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WESTCODE SEMICONDUCTORS LTD
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| Part No. |
WESTCODESEMICONDUCTORSLTD-R1279NS25J R1279NS24M
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| OCR Text |
...=67% v drm , i tm =1000a, di/dt=60a/s, i fg =2a, t r =0.5s, t j =25c s q rr recovered charge - 1250 - c q ra recovered charge, 50% chord - 7...200v/s s - - 0.022 double side cooled k/w r thjk thermal resistance, junction to heatsink - - 0.044 ... |
| Description |
2571 A, 2400 V, SCR
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| File Size |
677.86K /
12 Page |
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it Online |
Download Datasheet |
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Westcode Semiconductors, Ltd.
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| Part No. |
R1275NS21M R1275NS21L
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| OCR Text |
... =67% v drm , i t =2000a, di/dt=60a/s, i fg =2a, t r =0.5s, t j =25c s q rr recovered charge - 940 - c q ra recovered charge, 50% chord - 42...200v/s s - - 0.024 double side cooled k/w r thjk thermal resistance, junction to heatsink - - 0.048 ... |
| Description |
2541 A, 2100 V, ASSYMETRIC SCR 101A337, 3 PIN
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| File Size |
672.66K /
12 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SKW30N60
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| OCR Text |
...hz 1khz 10khz 100khz 0a 20a 40a 60a 80a 100a 120a 140a 160a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100a d...200v, t j = 125 c) figure 22. typical reverse recovery charge as a function of diode current slop... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
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| File Size |
272.38K /
13 Page |
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it Online |
Download Datasheet |
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