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MSK[M.S. Kennedy Corporation]
M.S. Kennedy Corporatio...
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| Part No. |
MSKDHC2800SRG DHC2803SE DHC2803S DHC2803SH DHC2805S DHC2805SE DHC2805SH DHC2805S-15
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| OCR Text |
...00 50 500 50 50 50 45 5 300 3.6 450 VDC VDC mA mA mA mA mVp-p mVp-p mAp-p mAp-p mV mV mV mV % % mV mV S S mV mV S S mV mV mS mS S S mS V V V...500v
4 5,6 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 1 1 4 1
NOTES:
+VIN = 28V, IOUT = 1.8A for DHC... |
| Description |
All Ceramic Capacitors9
6W DC-DC CONVERTERS
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| File Size |
407.79K /
9 Page |
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it Online |
Download Datasheet
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FUJI[Fuji Electric]
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| Part No. |
2SK1280
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| OCR Text |
... 10 0,35 15 2400 300 150 35 150 450 180 0,85 150
Max. 4,0 500 100 0,5 3600 450 220 50 220 650 270 1,6 200
Unit V V A nA S pF pF pF ns...500v
0,5
2SK1280
F-V Series
Drain-Source-On-State Resistance vs. Tch Typical Transfer Charac... |
| Description |
N-Channel MOS-FET(500v, 0.5Ohm, 18A, 150W)
N-Channel MOS-FET(500v 0.5Ohm 18A 150W)
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| File Size |
199.23K /
2 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT10045JFLL_03 APT10045JFLL APT10045JFLL03
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| OCR Text |
450
POWER MOS 7
(R)
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement m...500v ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 23A @ 25C RG = 0.6 6 INDUCTIVE SWI... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
91.20K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10045JLL_03 APT10045JLL APT10045JLL03
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| OCR Text |
450
S
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOS...500v ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 23A @ 25C RG = 1.6 6 INDUCTIVE SWI... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
91.05K /
5 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT10045LFLL APT10045B2FLL APT10045B2FLL_03 APT10045B2FLL03
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| OCR Text |
450
POWER MOS 7
(R)
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode p...500v ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 23A @ 25C RG = 0.6 6 INDUCTIVE SWI... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
90.03K /
5 Page |
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it Online |
Download Datasheet |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
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| Part No. |
APT10045LLL APT10045B2LL APT10045B2LL_03 APT10045B2LL03 B2LLG
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| OCR Text |
450
POWER MOS 7
(R)
R
MOSFET
B2LL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode pow...500v ID = 23A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500v ID = 23A @ 25C RG = 1.6 6 INDUCTIVE SWI... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 23; RDS(on) (Ohms): 0.45; BVDSS (V): 1000;
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| File Size |
90.08K /
5 Page |
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it Online |
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ZETEX[Zetex Semiconductors]
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| Part No. |
FMMT459_05 459 FMMT459 FMMT459TA FMMT459TC
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| OCR Text |
...VECV ICM IC IB PD Limit 500 500 450 6 6 0.5 0.15 0.2 625 5 806 6.4 -55 to +150 Unit V V V V V A A A mW mW/C mW mW/C C
PD
Tj:Tstg
Thermal resistance
Parameter Junction to ambient* Junction to ambient Symbol R JA R JA Value 200 155 ... |
| Description |
500v Silicon NPN high voltage switching transistor
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| File Size |
181.74K /
6 Page |
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it Online |
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Digitron Semiconductors
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| Part No. |
UFR7010 URF7020 URF7010
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| OCR Text |
...5 0.200 2.920 5.080 g - 0.450 - 11.430 h 0.220 0.249 5.580 6.320 j 0.250 0.375 6.350 9.530 k 0.156 - 3.960 - m - 0.667 - 16.940 n 0.030 0.080 0.760 2.030 p 0.140 0.175 3.560 4.450 ava... |
| Description |
ULTRA FAST RECOVERY RECTIFIERS
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| File Size |
256.21K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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