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  30w ch Datasheet PDF File

For 30w ch Found Datasheets File :: 278    Search Time::0.734ms    
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    FS2KM-16A

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS2KM-16A
OCR Text ...est VGS = 20V 10V 5V PD = 30w DRAIN CURRENT ID (A) 4.0 5V DRAIN CURRENT ID (A) 1.6 4.5V 3.0 1.2 2.0 PD = 30w...ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. chANNEL TEMPE...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITchING USE

File Size 48.09K  /  4 Page

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    FS2KM-18A

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS2KM-18A
OCR Text ...ACTERISTICS (TYPICAL) 5.0 PD = 30w VGS = 20V 10V 2.0 DRAIN CURRENT ID (A) 4.0 5V DRAIN CURRENT ID (A) 1.6 PD = 30w 4.5V ...ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. chANNEL TE...
Description Nch POWER MOSFET HIGH-SPEED SWITchING USE 2 A, 900 V, 7.3 ohm, N-chANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITchING USE

File Size 49.00K  /  4 Page

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    TDA7250

STMicroelectronics
Part No. TDA7250
OCR Text ...owers. RL = 8 15W BDX 53/54A +30w BDX 53/54B +50W BDW 93/94B +70W TIP 142/147 TL = 4 30w BDW 93/94A +50W BDW 93/94B +90W BDV 64/65B +130w MJ 11013/11014 9/11 TDA7250 DIP20 PACKAGE MEchANICAL DATA DIM. MIN. a1 B b b1 D E e e3 ...
Description 6W AUDIO AMPLIFIER WITH STAND-BY

File Size 128.15K  /  11 Page

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    ZD120-1205 ZD120-2405 ZD120-2408

DENSEI-LAMBDA
Part No. ZD120-1205 ZD120-2405 ZD120-2408
OCR Text 30w ~ 120W Model name ZD 30-2405 [ex.] 24 05 Nominal output voltage Name of series Output power ch1: 24V output ch2: 5V output PC Bo...ch ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 ch1 ch2 C...
Description Dual output 30w ~ 120W

File Size 121.95K  /  2 Page

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    Mitsubishi
Part No. MGFS45V2527 S452527
OCR Text 30w INTERNALLY MATchD GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use...ch-c) Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain...
Description 2.5~2.7GHz BAND 30w INTERNALLY MATchD GaAs FET
From old datasheet system

File Size 27.03K  /  2 Page

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    FS5VSH-3

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS5VSH-3
OCR Text ...D (A) 4.0 1.5V 6 PD = 30w 3.0 4 1.5V 2.0 2 TC = 25C Pulse Test 1.0 TC = 25C Pulse Test 0 0 1.0 2.0...ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. chANNEL TEMPE...
Description HIGH-SPEED SWITchING USE

File Size 38.11K  /  4 Page

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    RA30H2127M RA30H2127M-01 RA30H2127M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA30H2127M RA30H2127M-01 RA30H2127M-E01
OCR Text 30w 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA30H2127M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios ...ch-case) (C/W) 4.5 1.2 IDD @ T =40% (A) 0.95 5.0 VDD (V) 12.5 The channel temperatures of each st...
Description 210-270MHz 30w 12.5V MOBILE RADIO 210 - 270MHz功率30w 12.5V移动通信

File Size 57.86K  /  8 Page

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    RA30H4047M RA30H4047M-01 RA30H4047M-E01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. RA30H4047M RA30H4047M-01 RA30H4047M-E01
OCR Text ... RF MOSFET MODULE 400-470MHz 30w 12.5V MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt m...ch-case) (C/W) 5.0 2.4 1.2 IDD @ T =40% (A) 0.30 1.50 4.20 VDD (V) 12.5 The channel temperatures ...
Description 400-470MHz 30w 12.5V MOBILE RADIO 400 - 470MHz的功0W 12.5V移动通信

File Size 65.93K  /  9 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2123 S452123
OCR Text 30w INTERNALLY MATchD GaAs FET DESCRIPTION The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use...ch-c) Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain...
Description 2.1 - 2.3GHz BAND 30w INTERNALLY MATchD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30w INTERNALLY MATchD GaAs FET

File Size 24.72K  /  2 Page

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    RA35H1516M RA35H1516M-01 RA35H1516M-E01

Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. RA35H1516M RA35H1516M-01 RA35H1516M-E01
OCR Text ...) 50 40 30 20 10 0 150 t @Pout=30w VDD=12.5V Pin=50mW Pout @VGG=5V 2nd, 3rd HARMONICS versus FREQUENCY -20 TOTAL EFFICIENCY T(%) HARMO...ch-case) IDD @ T=50% VDD Stage (W) (W) (C/W) (A) (V) st 0.05 5.0 4.5 0.95 1 12.5 nd 2 5.0 40.0 1.2 5...
Description 154-162MHz 40W 12.5V MOBILE RADIO 154 - 162MHz功率40W 12.5V移动通信
154 MHz - 162 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

File Size 74.15K  /  8 Page

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For 30w ch Found Datasheets File :: 278    Search Time::0.734ms    
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