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  30ns 64k x 16 cmos dynamic ram Datasheet PDF File

For 30ns 64k x 16 cmos dynamic ram Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
Description 1M x 16 bit cmos dynamic ram with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit cmos dynamic ram with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit cmos dynamic ram with Extended Data Out

File Size 550.56K  /  35 Page

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    Samsung Electronic
Part No. KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description 1M x 16Bit cmos dynamic ram with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit cmos dynamic ram with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit cmos dynamic ram with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit cmos dynamic ram with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit cmos dynamic ram with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit cmos dynamic ram with extended data out, 45ns, VCC=5.0V, self-refresh

File Size 803.02K  /  35 Page

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    Samsung Electronic
Part No. K4E16708112D K4E160811D K4E160811D-B K4E160811D-F K4E160812D K4E160812D-B K4E160812D-F K4E170811D K4E170811D-B
Description 2M x 8Bit cmos dynamic ram with Extended Data Out Data Sheet
2M x 8 bit cmos dynamic ram with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit cmos dynamic ram with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit cmos dynamic ram with extended data out. Supply voltage 5V, 4K refresh cycle.

File Size 254.30K  /  21 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 KM48C8104BK-5 KM48C8104BS-6 KM48C8104BS-5
Description 8M x 8bit cmos dynamic ram with extended data out, 5V, 50ns
8M x 8bit cmos dynamic ram with extended data out, 5V, 60ns

File Size 382.88K  /  21 Page

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    V53C16125H V53C16125HK60 V53C16125HT50

Mosel Vitelic Corp
Mosel Vitelic, Corp
Mosel Vitelic Corp
Part No. V53C16125H V53C16125HK60 V53C16125HT50
Description HIGH PERFORMANCE 128K x 16 BIT FAST PAGE MODE cmos dynamic ram
128K x 16bit high performance fasr page mode cmos dynamic ram

File Size 137.65K  /  18 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2000BSL-5 KM48C2000BSL-7 KM48C2000BSL-6 KM48C2100BSL-5 KM48C2100BSL-6 KM48C2100BSL-7 KM48V2000BSL-5 KM48C2000BKL-5 KM48C2000BKL-6 KM48C2000BKL-7 KM48C2100BKL-5 KM48C2100BKL-6 KM48C2100BKL-7 KM48V2000BKL-5 KM48V2000BKL-6 KM48V2100BKL-5 KM48V2100BKL-6 KM48V2100BKL-7
Description 2M x 8bit cmos dynamic ram with fast page mode, 3.3V, 70ns
2M x 8bit cmos dynamic ram with fast page mode, 5V, 50ns
2M x 8bit cmos dynamic ram with fast page mode, 5V, 70ns
2M x 8bit cmos dynamic ram with fast page mode, 5V, 60ns
2M x 8bit cmos dynamic ram with fast page mode, 3.3V, 50ns
2M x 8bit cmos dynamic ram with fast page mode, 3.3V, 60ns

File Size 79.12K  /  8 Page

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    5FF10 5FF05 5FF15

Semtech Corporation
Part No. 5FF10 5FF05 5FF15
Description RECTIFIER, up to 150V, 5A, 30ns

File Size 146.15K  /  4 Page

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    1N5811 1N5809

Semtech Corporation
Part No. 1N5811 1N5809
Description RECTIFIER, up to 150V, 6A, 30ns

File Size 192.10K  /  3 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
Description 4M x 4 bit cmos dynamic ram with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit cmos dynamic ram with Extended Data Out Data Sheet
4M x 4 bit cmos dynamic ram with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit cmos dynamic ram with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit cmos dynamic ram with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    NIEC[Nihon Inter Electronics Corporation]
Part No. TCU20A30
Description FRD - 20A 300V 30ns

File Size 67.58K  /  5 Page

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For 30ns 64k x 16 cmos dynamic ram Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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